نتایج جستجو برای: electron leakage

تعداد نتایج: 337817  

Journal: :IEEE Computer 2003
Nam Sung Kim Todd M. Austin David Blaauw Trevor N. Mudge Krisztián Flautner Jie S. Hu Mary Jane Irwin Mahmut T. Kandemir Narayanan Vijaykrishnan

P ower consumption is now the major technical problem facing the semiconductor industry. In comments on this problem at the 2002 International Electron Devices Meeting, Intel chairman Andrew Grove cited off-state current leakage in particular as a limiting factor in future microprocessor integration. 1 Off-state leakage is static power, current that leaks through transistors even when they are ...

Journal: :Investigative ophthalmology & visual science 1987
E de Juan D Wilson D Hatchell

Breakdown in the blood-retinal barrier occurs in retinal neovascularization in a number of diseases. To study the anatomic basis of this breakdown, we examined retinal neovascularization induced by injection of 250,000 homologous fibroblasts into the vitreous cavity of pigmented rabbits. Neovascularization is evident by electron microscopy in this model 3 days after fibroblast injection. Fluore...

2010
Fernando Accorsi OROSCO Clovis Monteiro BRAMANTE Roberto Brandão GARCIA Norberti BERNARDINELI Ivaldo Gomes de MORAES

OBJECTIVE This study used dye leakage assay and scanning electron microscopy to evaluate, respectively, the sealing ability and marginal adaptation of three root-end filling materials used as apical plugs, as well as the possible correlation between these properties. MATERIAL AND METHODS Ninety-eight single-rooted human teeth were prepared to simulate an open apex. The teeth were allocated to...

2011
Mastura Shafinaz Zainal Abidin Abdul Manaf Hashim Maneea Eizadi Sharifabad Shaharin Fadzli Abd Rahman Taizoh Sadoh

The sensing responses in aqueous solution of an open-gated pH sensor fabricated on an AlGaN/GaN high-electron-mobility-transistor (HEMT) structure are investigated. Under air-exposed ambient conditions, the open-gated undoped AlGaN/GaN HEMT only shows the presence of a linear current region. This seems to show that very low Fermi level pinning by surface states exists in the undoped AlGaN/GaN s...

Journal: :Microelectronics Reliability 2005
C. Trapes Didier Goguenheim Alain Bravaix

I. Introduction By reducing the gate-oxide thickness (T OX), the proportion of injected tunneling carriers increases during stress so that MOSFET's parameters are slightly changed. In thicker oxides (T OX >3.5nm), Stress Induced Leakage Current (SILC) was a good marker of oxide degradation. In thinner oxide, gate oxide leakage current appears in depletion regime, SILC is recalled as Low Voltage...

Journal: :International endodontic journal 2010
D Mohn C Bruhin N A Luechinger W J Stark T Imfeld M Zehnder

AIM To engineer systems using polyisoprene (PI) or polycaprolactone (PCL) and nanometric bioactive glass 45S5 (BG) that could create a hydroxyapatite interface and thus ultimately make the use of an endodontic sealer unnecessary. METHODOLOGY Different composites using PI or PCL as matrix material were prepared with BG contents of up to 30 wt%. Unfilled PI and PCL, commercially available fille...

Journal: :Journal of neuropathology and experimental neurology 2012
Zuzanna Michalak Aurore Lebrun Mathieu Di Miceli Marie-Claude Rousset Arielle Crespel Philippe Coubes David C Henshall Mireille Lerner-Natoli Valérie Rigau

Focal epilepsies are often associated with blood-brain barrier disruption. In 4 entorhinal cortex tissue samples and 13 hippocampal samples from patients with pharmacoresistent temporal lobe epilepsy, we observed immunoglobulin G (IgG) leakage in the parenchyma and IgG-positive neurons that had evidence of neurodegeneration, such as shrinkage and eosinophilia. These findings were not present in...

2000
JAKUB KEDZIERSKI PEIQI XUAN VIVEK SUBRAMANIAN JEFFREY BOKOR CHENMING HU ERIK ANDERSON

As the scaling of CMOS transistors extends to the sub-20 nm regime, the most challenging aspect of device design is the control of the off-state current. The traditional methods for controlling leakage current via the substrate doping profile will be difficult to implement at these dimensions. A promising method for controlling leakage in sub-20 nm transistors is the reduction in source-to-drai...

1999
William P. Swanson

The integral dose of accelerator-produced leakage neutrons to patients undergoing high-energy photon therapy is estimated and compared to other sources of integral dose. The leakage neutron component contributes about 5 g rad for a typical treatment course of 5000 rad. When averaged over a 70-kg tissue volume, the corresponding dose amounts to only 0.36 rad. From this, the risk of inducing fata...

2014
Chia-Sui Sun Cindy Yu-Hsiang Wang Bryan Po-Wen Chen Ruei-Yu He Gerard Chun-Hao Liu Chih-Hsien Wang Wenlung Chen Yijuang Chern Joseph Jen-Tse Huang

TAR DNA-binding protein (TDP-43) was identified as the major ubiquitinated component deposited in the inclusion bodies in amyotrophic lateral sclerosis (ALS) and frontotemporal lobar degeneration with ubiquitin-positive inclusions (FTLD-U) in 2006. Later on, numerous ALS-related mutations were found in either the glycine or glutamine/asparagine-rich region on the TDP-43 C-terminus, which hinted...

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