The dynamic scaling of the island-size distribution in submonolayer epitaxial growth and its dependence on the critical island size i is studied using a realistic model of epitaxial growth for i ­ 0, 1, 2, and 3. An analytic expression for the scaled island-size distribution as a function of i is also proposed. Our results agree well with experiments on FeyFe(100) deposition and on FeyCu(100) d...

Hydrogen-gas etching of a 6H-SiC(0001) surface and subsequent annealing in nitrogen atmosphere leads to the formation of a silicon oxynitride (SiON) epitaxial layer. A quantitative low-energy electron diffraction analysis revealed that the SiON layer has a hetero-double-layer structure: a silicate monolayer on a silicon nitride monolayer via Si-O-Si bridge bonds. There are no dangling bonds in ...

Recent progress on VCSELs for datacom applications within the author’s group at UCSB will be reviewed. Efforts on ‘all-epitaxial, long-wavelength’ InP-based devices as well as efficient, small-cavity-volume GaAsbased VCSELs will be included. InGaAlAs/InGaAsSb/InP all-epitaxial wafers processed in a conventional manner are found to provide viable VCSELs across the entire 1300-1600 nm wavelength ...

We report on nanoscale strain gradients in ferroelectric HoMnO(3) epitaxial thin films, resulting in a giant flexoelectric effect. Using grazing-incidence in-plane x-ray diffraction, we measured strain gradients in the films, which were 6 or 7 orders of magnitude larger than typical values reported for bulk oxides. The combination of transmission electron microscopy, electrical measurements, an...

The solid-phase epitaxial growth kinetics of amorphized (011) Si with application of in-plane 2 11 1⁄2 uniaxial stress to magnitude of 0.9 0.1 GPa were studied. Tensile stresses did not appreciably change the growth velocity compared with the stress-free case, whereas compression tended to retard the growth velocity to approximately one-half the stress-free value. The results are explained usin...

We report on the growth of epitaxial La2/3Sr1/3MnO3 thin films on buffered Si~001! substrates. We show that a suitable choice of the buffer heterostructure allows one to obtain epitaxial (00h), (0hh), and ~hhh! manganite thin films. The magnetotransport properties are investigated and we have found that the low-field magnetoresistance is directly related to the width of the normal-to-plane rock...

The ultrafast relaxation and recombination dynamics of photogenerated electrons and holes in epitaxial graphene are studied using optical-pump terahertz-probe spectroscopy. The conductivity in graphene at terahertz frequencies depends on the carrier concentration as well as the carrier distribution in energy. Time-resolved studies of the conductivity can therefore be used to probe the dynamics ...

A semiempirical epitaxial model has been derived which correlates and interrelates the surface free energy, ultrastructural morphology, surface charge, surface chemistry, and surface molecular motions of a model triblock copolymer to thrombogenesis. This paper addresses the aspect of: (1) ultrastructure order versus disorder, (2) primary and secondary molecular motions, (3) surface and side cha...

The capability to control the type and amount of charge carriers in a material and, in the extreme case, the transition from metal to insulator, is one of the key challenges of modern electronics. By employing angle-resolved photoemission spectroscopy we find that a reversible metal to insulator transition and a fine-tuning of the charge carriers from electrons to holes can be achieved in epita...

Homoepitaxial Si films have been deposited at a high rate of 200 nm s-1 over a wide area of 20 mm × 80 mm by cluster-assisted mesoplasma chemical vapor deposition (MPCVD) on a moving substrate. The obtained epitaxial Si films exhibited a uniform roughness of 0.1-0.3 nm (1 × 1 μm2) and a Hall mobility of ∼240 cm2 V-1 s-1. The results suggested that under the MPCVD the deposition precursors forme...