Type Device Wavelength (nm) Band Helium-Neon Tank, gunnery trainer 642.8 Visible (red) Ruby Rangefinder 694.3 Visible (red) Gallium-Arsenide MILES 905.0 Near-infrared Nd:YAG Rangefinder, target designator 1,064.0 Near-infrared Carbon Dioxide Rangefinder 10,600.0 Far-infrared MILES: multiple integrated laser engagement system Nd:YAG: neodymium:yttrium-aluminum-garnet Adapted from Headquarters, D...

High quality epitaxial indium zinc oxide (heavily indium oxide doped) (epi-n-IZO) thin films were optimized by laser-molecular beam epitaxy (L-MBE) i.e., pulsed laser deposition (PLD) technique for fabricating novel isoand hetero-semiconductor–insulator–semiconductor (SIS) type solar cells using Johnson Matthey ‘‘specpure’’grade 90% In2O3 mixed 10% ZnO (as commercial indium tin oxide (ITO) comp...

Emerging trend in semiconductor nanotechnology motivates to design various crystalline nanotubes. The structural and electronic transport properties of single walled zigzag Gallium Arsenide nanotubes have been investigated using Density Functional Theory (DFT) and Non-Equilibrium Green’s Function (NEGF) based First Principle formalisms. Structural stability and enhanced electronic transmission ...

In this paper, the propagation properties of Surface Plasmon Polariton mode in Metal-Insulator-Metal waveguide are presented. An additional thin metallic film is inserted inside the insulator for higher confinement. Silver (Ag) has been taken as the metal and air, gallium lanthanum sulphide (GLS) and aluminum gallium arsenide (AlGaAS) as the insulators for the construction of the waveguide. Fin...

In this paper, we design aperiodic gratings based on orientation-patterned gallium arsenide (OP-GaAs) for converting 2.1 μm pump laser radiation into long-wave infrared (8-12 μm) in an idler-efficiency-enhanced scheme. These single OP-GaAs gratings placed in an optical parametric oscillator (OPO) or an optical parametric generator (OPG) can simultaneously phase match two optical parametric ampl...

Atomic Force microscopy was used to investigate the morphology of GaAs(001) layers deposited by molecular beam epitaxy using a non conventional growth method that involves the supply of a few monolayers of gallium (the arsenic cell is shuttered) followed by the annealing of the surface under an arsenic ux (the gallium cell is shuttered). When the silicon shutter is opened and closed together wi...

The neuron-MOS (neu-MOS) transistor, recently discovered by Shibata and Ohmi in 1991 [T. Shibata, T. Ohmi, International Electron Devices Meeting, Technical Digest, 1991] uses capacitively coupled inputs onto a floating gate. Neu-MOS enables the design of conventional analog and digital integrated circuits with a significant reduction in transistor count [L.S.Y. Wong, C.Y. Kwok, G.A. Rigby, in:...