نتایج جستجو برای: gate assignment

تعداد نتایج: 87125  

Journal: :Journal of Public Economic Theory 2022

We evaluate the goal of maximizing number individuals matched to acceptable outcomes. present two mechanisms that maximize assignments. The first is Pareto efficient and undominated—in terms assignments—in equilibrium. second fair for unassigned agents assigns weakly more than any stable mechanism in

Journal: :Science 1960

Journal: :Koedoe 1968

Journal: :The Computer Science Journal of Moldova 1999
Nikolay Nikolov

The paper presents experimental results on quadratic assignment problem. The “scanning area” method formulated for radioelectronic equipment design is applied. For all more complex tests ours results are better or coincident with the ones known in literature. Conclusion concerning the effectiveness of method are given.

Journal: :the international journal of humanities 2010
mireyla ahmadi

russian language, with regard to its grammar, is a language with its own special complexities, hardly found in other languages. although languages are different from each other, they have some similarities as well. the iranian learner, while learning russian, analyzes the sentences using patterns similar to his/ her native language patterns. occasionally, such native patterns cause the learner ...

2002
Justin L. Tripp Preston A. Jackson Brad L. Hutchings

Sea Cucumber (SC) is a synthesizing compiler for FPGAs that accepts Java class files as input (generated from Java source files) and that generates circuits that exploit the coarseand fine-grained parallelism available in the input class files. Programmers determine the level of coarse-grained parallelism available by organizing their circuit as a set of inter-communicating, concurrent threads ...

Journal: :Nature 2003

2011
Neha Srivastava G. S. Tripathi Madan Mohan Malaviya

This paper discusses the type of capacitances for Single Gate MOSFET and Double Gate MOSFET including their quantity. The effect of parasitic capacitance makes double gate MOSFET more suitable component for the designing of digital logic switches than single gate MOSFET. Here, we introducing Independent double gate MOSFET operation based on VeSFET concept. Then introducing with the total capaci...

2004
Yee-Chia Yeo

Reduction of the gate length and gate dielectric thickness in complementary metal oxide semiconductor (CMOS) transistors for higher performance and circuit density aggravates problems such as poly-silicon (poly-Si) gate depletion, high gate resistance, and dopant penetration from doped poly-Si gate. To alleviate these problems in nanoscale transistors, there is immense interest in the replaceme...

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