In this paper, the magnetic field effect on carrier transport phenomenon in double gate metal-oxide-semiconductor field-effect transistor (MOSFET) has been investigated. This is done by exploring Lorentz force and behavior of a semiconductor subjected to constant field. The modulates electrons position density as well potential distribution case silicon tunnel tunneling field-effects (FETs). mo...

Silicon nanowires (Si NW) are ideal candidates for low-cost solution processed field effect transistors (FETs) due to the ability of nanowires to be dispersed in solvents, and demonstrated high charge carrier mobility. The interface between the nanowire and the dielectric plays a crucial role in the FET characteristics, and can be responsible for unwanted effects such as current hysteresis duri...

The electrical properties characterization of AlGaN/GaN based Modulation Doped Field Effect Transistor (MODFET) is reported. Threshold voltage Vth=-3.87 V, maximum saturation current Idss=122.748 mA, gate-source capacitance at zero gate voltage and also maximum gate-source capacitance= 0.161753 pF/μm, gate-source capacitance=0.157233 pF/μm at Id=0.3Idss, trans-conductance (gm) = 31.3806 mS/mm a...

A novel low power and Positive Feedback Adiabatic Logic (PFAL) 5-input OR Gate is presented in this paper. The power consumption and general characteristics of the PFAL 5 input OR gate are then compared against two low power 5-input OR Gate; Efficient Charge Recovery Logic (ECRL), Conventional CMOS 5-input OR Gate. The proposed PFAL 5-input OR Gate design was proven to be superior to the other ...

In this paper, novel NAND and AND gates are proposed using standard operations on DNA strands in presence of ligase enzyme. The NAND gate is realized as it is a universal gate and any Boolean function can be implemented through it. Thus, this paper provides an initial threshold to realize components of primitive DNA computers. From the VLSI perspective, this paper also proposes novel two transi...

We demonstrate experimentally that a hybrid single-electron transistor with superconducting leads and a normal-metal island can be refrigerated by an alternating voltage applied to the gate electrode. The simultaneous measurement of the dc current induced by the rf gate through the device at a small bias voltage serves as an in situ thermometer.