We give an overview of the state-of-the-art of heterostructure RF-device simulation for industrial application based on III–V compound semiconductors. The work includes a detailed comparison of device simulators and current transport models to be used, and addresses critical modeling issues. Results from two-dimensional hydrodynamic simulations of heterojunction bipolar transistors (HBTs) and h...

Multi-finger power SiGe heterojunction bipolar transistors (HBTs) with emitter ballasting resistor and non-uniform finger spacing are fabricated, and temperature profiles of them are measured. Experimental results show that both of them could improve the temperature profile compared with an HBT which has uniform finger spacing. For the HBT with emitter ballasting resistor, the ability to lower ...

A temperature prediction method of Insulated Gate Bipolar Transistor (IGBT) module based on autoregressive moving average model is proposed. Historical and current temperature datum of IGBT module is indispensable to the ARMA method, temperature time series is obtained by uniform sampling, and autoregressive (AR) model is constructed. Temperature time series prediction of IGBT module is realize...

Heterojunction Bipolar Transistors (HBTs) attract much industrial interest nowadays because of their capability to operate at high current densities [l]. AlGaAs/GaAs or InGaP/GaAs based devices are used for power applications in modern mobile telecommunication systems. Accurate simulations save expensive technological efforts to obtain significant improvements of the device performance. The two...

In this article, we report the effect of gamma irradiation on the DC characteristics of InGaP/GaAs single heterojunction bipolar transistors (SHBTs) based on the simulation with the extracted model parameters from experiment data before irradiation, after irradiation and after annealing. A simplified Vertical Bipolar Inter-Company (VBIC) static model is proposed to study the operational mechani...

A novel bipolar transistor structure, namely, a SiC emitter lateral NPM Schottky collector bipolar transistor (SCBT) with a silicon-on-insulator (SOI) substrate is explored using two-dimensional (2-D) simulation. A comprehensive comparison of the proposed structure with its equivalent Si lateral NPN BJT and an SiC emitter lateral NPN HBT is presented. Based on simulation results, the authors de...

In this paper various mixers are defined for CDMA applications . Using CMOS makes easier for mixers to act on same chip with other digital and analog circuits . The topologies we are defining are dual gate mixers , back gate mixers, single balanced current switching mixers and back end mixers . The backgate mixer utilizes the inherent lateral bipolar transistor in CMOS. Device simulations were ...

The authors report a new p-n-p surface accumulation layer transistor (SALTran) on SOI, which uses the concept of surface accumulation of holes near the emitter contact to significantly improve the current gain. Using two-dimensional simulation, the performance of the proposed device has been evaluated in detail by comparing its characteristics with those of the previously published conventional...

One of the key limits of high-frequency operation of bipolar transistors is the base transient time, which is proportional to the square of the base width when the base transport is dominated by diffusion. Consequently, high-frequency bipolar transistors tend to use thin bases (<100 nm) that results in a short base transient time and a high cut-off frequency fT. However, for high frequency oper...