Abstract A multi-grooves barrier-etched structure between barrier layer and passivation is proposed in this paper to suppress the hot electron effect at gate edge on drain side p-GaN AlGaN/GaN high-electron-mobility transistor. In TCAD simulations, groove induces extra electric field concentration region AlGaN/SiN interface area, which can lower high peak temperature channel edge, leading allev...

We achieved low-resistance nonalloyed Ohmic contacts for n-type GaN using selective area growth (SAG) by plasma assisted molecular beam epitaxy (PAMBE). Thus-fabricated high electron mobility transistor (HEMT) demonstrated comparable or more favorable electrical performance than the conventional alloyed counterpart. Meanwhile, the nonalloyed PAMBE-SAG technique avoids problems created by the hi...

We demonstrated that modulated infrared radiation can cause the resonant excitation of plasma oscillations in quantum well diode and transistor structures with high electron mobility. This effect provides a new mechanism for the generation of tunable terahertz radiation using photomixing of infrared signals. We developed a device model for a quantum well photomixer and calculated its high-frequ...

We report resistivity measurements from 0.03 to 10 K in a dilute high mobility 2D electron system. Using an undoped GaAs/AlGaAs heterojunction in a gated field-effect transistor geometry, a wide range of densities, 0.16 x 10(10) to 7.5 x 10(10) cm(-2), are explored. For high densities, the results are quantitatively shown to be due to scattering by acoustic phonons and impurities. In an interme...

Organic electrochemical transistors (OECTs) have the potential to revolutionize field of organic bioelectronics. To date, most reported OECTs include p-type (semi-)conducting polymers as channel material, while n-type are yet at an early stage development, with best performing electron-transporting materials still suffering from low transconductance, electron mobility, and slow response time. H...

High mobility thin-film transistor technologies that can be implemented using simple and inexpensive fabrication methods are in great demand because of their applicability in a wide range of emerging optoelectronics. Here, a novel concept of thin-film transistors is reported that exploits the enhanced electron transport properties of low-dimensional polycrystalline heterojunctions and quasi-sup...

High-quality growth of planar GaAs nanowires (NWs) with widths as small as 35 nm is realized by comprehensively mapping the parameter space of group III flow, V/III ratio, and temperature as the size of the NWs scales down. Using a growth mode modulation scheme for the NW and thin film barrier layers, monolithically integrated AlGaAs barrier-all-around planar GaAs NW high electron mobility tran...

AlGaAs/InGaAs/GaAs pHEMT (pseudomorphic high electron mobility transistors) materials and devices have been studied with 20MeV Li ions irradiation at two different fluences. The structural and electrical characteristics have been studied and compared before and after the irradiation. It has been found that with the irradiation FWHM of the material not changes as confirmed with x-ray rocking cur...

Voltage-tunable plasmon resonances in the two-dimensional electron gas 2DEG of a high electron mobility transistor HEMT fabricated from the InGaAs/InP materials system are reported. The device was fabricated from a commercial HEMT wafer by depositing source and drain contacts using standard photolithography and a semitransparent gate contact that consisted of a 0.5 m period transmission grating...