نتایج جستجو برای: i v characteristics
تعداد نتایج: 1882161 فیلتر نتایج به سال:
We electrochemically deposit conducting polymer to bridge two closely placed electrodes, and then form a polymer nanowire by stretching the polymer bridge with the electrodes. During stretching, the conductance increases initially as the polymer chains are aligned in parallel, and then decreases in a stepwise fashion, due to abrupt changes in the nanowire thickness. We study the current– voltag...
In this research, monocrystalline gallium oxide (Ga₂O₃) nanobelts were synthesized through oxidation of metal gallium at high temperature. An electronic device, based on an individual Ga₂O₃ nanobelt on Pt interdigital electrodes (IDEs), was fabricated to investigate the electrical characteristics of the Ga2O3 nanobelt in a dry atmosphere at room temperature. The current-voltage (I-V) and I/V-t ...
We describe the dynamics of fluxons moving in a frustrated Josephson junction with p, d, and f -wave symmetry and calculate the I − V characteristics. The behavior of fluxons is quite distinct in the long and short length junction limit. For long junctions the intrinsic flux is bound at the center and the moving integer fluxon or antifluxon interacts with it only when it approaches the junction...
A m i t r a z, a n i ns e c t i c i d e /a ca ri c i de of the f o r m a m i d i n e p e st i c i d e s group, is a ? 2 a d r e n e r g i c ag on i st a nd of t he a m i d i ne c h e m i ca l f a m il y generally us e d to c o n t r ol animal e c top a r a s i t e s. Poisoning due to am i t r a z i s r a r e and character...
We describe the dynamics of fluxons moving in a frustrated Josephson junction with p, d, and f-wave symmetry and calculate the I − V characteristics. The behavior of fluxons is quite distinct in the long and short length junction limit. For long junctions the intrinsic flux is bound at the center and the moving integer fluxon or antifluxon interacts with it only when it approaches the junction'...
The authors report the fabrication and I-V characteristics of ZnO nanorod metal-semiconductor-metal photodetectors on flexible polyimide substrate. From field-emission scanning electron microscopy and X-ray diffraction spectrum, ZnO nanorods had a (0002) crystal orientation and a wurtzite hexagonal structure. During the I-V and response measurement, the flexible substrates were measured with (i...
A new method for measuring component cell current-voltage (I-V) characteristics in a tandem-junction two-terminal solar cell is described. The measurements are performed with (a-Si/a-SiGe) tandem structure solar cell using two separate light beams of different wavelengths. The I-V characteristics of the compone nt cells are obtained and open-circuit voltage (Voc), short-circuit current (Isc) an...
Individual semiconducting single-walled carbon nanotubes ~SWNTs! of various diameters are studied by electrical measurements. Transport through a semiconducting SWNT involves thermal activation at high temperatures, and tunneling through a reverse biased metal–tube junction at low temperatures. Under high bias voltages, current–voltage (I – V) characteristics of semiconducting SWNTs exhibit pro...
let $n,t_1,...,t_k$ be distinct positive integers. a toeplitz graph $g=(v, e)$ denoted by $t_n$ is a graph, where $v ={1,...,n}$ and $e= {(i,j) : |i-j| in {t_1,...,t_k}}$.in this paper, we present some results on decomposition of toeplitz graphs.
Phonon-assisted tunneling (PhAT) model is applied for explication of temperature-dependent conductivity and I-V characteristics measured by various investigators for graphene nanoribbons and oxides ones. Proposed model describes well not only current dependence on temperature but also the temperature-dependent I-V data using the same set of parameters characterizing material under investigation...
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