 In this article, we report an attempt of extending the InGaAsN materials towards 1.3μm and 1.55μm wavelength. All these InGaAsN samples are grown in a plasma-assisted solid-source molecular-beam epitaxy (SSMBE) system. Our experiments revealed that the nitrides could be grown with both direct nitrogen beam and dispersive nitrogen. The nitrogen incorporation rate could be reduced by the presen...

In this work, InSb nanowires are grown vertically on Si (111) with metal organic chemical vapor deposition using InAs as seed layer, instead of external metal catalyst. Two groups of InSb nanowires are fabricated and characterized: one group presents Indium droplets at the nanowire's free end, while the other, in contrast, ends without Indium droplet but with pyramid-shaped InSb. The indium-dro...

We have studied the initial stages of heterojunction formation during the metalorganic vapor-phase epitaxy of indium arsenide on indium phosphide. Exposing an InP ~001! film to 10 mTorr of tertiarybutylarsine below 500 °C results in the deposition of a thin InAs layer from 1.5 to 5.0 atomic layers thick ~2.3–7.5 Å!. The surface of this epilayer remains atomically smooth independent of arsenic e...

The synthesis of size-monodispersed indium nanoparticles via an innovative simultaneous phase transfer and ripening method is reported. The formation of nanoparticles occurs in a one-step process instead of well-known two-step phase transfer approaches. The synthesis involves the reduction of InCl3 with LiBH4 at ambient temperature and although the reduction occurs at room temperature, fine ind...

In this study, the corrosion resistance of Ag-Au-Cu-Pd system alloys consisting of 5 or 10 mass% indium was evaluated. Levels of element release and tarnish were determined and electrochemical measurements performed. Results were compared with those for commercial silver-palladium-gold alloy. In terms of electrochemical behavior, the transpassive potential of these experimental alloys was 168-2...

in the testicular damage caused by indium arsenide and indium phosphide in hamsters during two years after intratracheal instillations. (CIGS) nanocrystal " inks " for printable photovoltaics. Selective sequential dissolution for the determination of inorganic indium compounds in the particulate matter of emissions and workplace air. Current evaluation Conclusion from the previous Monograph (IA...

Single photon-emission tomography (SPECT) and indium 111-labeled monoclonal antimyosin Fab fragments were used to measure myocardial infarct size in 12 dogs, six subjected to balloon catheter-induced coronary artery occlusion for 6 hr (late reperfusion) and six subjected to occlusion with reperfusion at 2 hr (early reperfusion). Tomographic imaging was performed 24 hr after the intravenous inje...

ON THE PROPERTIES OF INDIUM DOPED ZnO THIN FILMS 4.

The exponential rise in the density of silicon CMOS transistors has now reached a limit and threatening to end the microelectronics revolution. To tackle this difficulty, group III–V compound semiconductors due to their outstanding electron transport properties and high mobility are very actively being researched as channel materials for future highly scaled CMOS devices. In this paper, we have...

With the emergence of applications based on short-wavelength infrared light, indium arsenide quantum dots are promising candidates to address existing shortcomings of other infrared-emissive nanomaterials. However, III-V quantum dots have historically struggled to match the high-quality optical properties of II-VI quantum dots. Here we present an extensive investigation of the kinetics that gov...