We used an ensemble Monte Carlo simulator to study both the dc and transient behavior of a double gate silicon-on-insulator transistor sDGSOId operated as a velocity modulation transistor sVMTd and as a conventional field effect transistor sFETd. Operated as a VMT, the DGSOI transistor provides switching times shorter than 1 ps regardless of the channel length, with a significant current modula...

A potentiometric non-enzymatic sensor using off-chip extended-gate field effect transistor (EGFET) with a ferrocenyl-alkanethiol modified gold electrode is demonstrated for determining the uric acid concentration in human serum and urine. Hexacyanoferrate (II) and (III) ions are used as redox reagent. This potentiometric sensor measures the interface potential on the ferrocene immobilized gold ...

The unprecedented growth in industrial motor drives over the past decade resulted from the process improvements demanded by the automation industry. With the increased speed of modern micro-controllers and digital signal processors and the reduced Insulated Gate Bipolar Transistor (IGBT) drive package size, coupled with the low maintenance of ac motors, multiple machine configurability has been...

Silicon nanowires (Si NW) are ideal candidates for low-cost solution processed field effect transistors (FETs) due to the ability of nanowires to be dispersed in solvents, and demonstrated high charge carrier mobility. The interface between the nanowire and the dielectric plays a crucial role in the FET characteristics, and can be responsible for unwanted effects such as current hysteresis duri...

In the world of Integrated Circuits, Complementary Metal–Oxide– Semiconductor (CMOS) has lost its credentiality during scaling beyond 32nm. Scaling causes severe Short Channel Effects (SCE) which are difficult to suppress. As a result of such SCE many alternate devices have been studied. Some of the major contestants include Multi Gate Field Effect Transistor (MuGFET) like FinFET and Carbon Nan...

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– A new type of NO2 gas sensor has been made using the Floating Gate Field Effect Transistor (FG-FET) sensor system. 200 nm ZnO films were deposited on Si/Ti/Pt electrodes, which are mounted on FG-FET chips. SEM and EDX characterization methods were employed to study the surface of these films. The change in the work function of the film due to their interaction with NO2 has been measured at va...

The field-effect mobility in an organic thin-film transistor is studied theoretically. From a percolation model of hopping between localized states and a transistor model an analytic expression for the field-effect mobility is obtained. The theory is applied to describe the experiments by Brown et al. [Synth. Met. 88, 37 (1997)] on solution-processed amorphous organic transistors, made from a p...

In 1952, Hodgkin-Huxley have developed an electronic circuit describing the biophysical nature of a neuron. Acetylcholine field effect transistor (AchFET) has been developed in this paper for detection of Acetylcholine (neurotransmitter) and then the AchFET is used in an electronic circuit to reproduce neuronal signals. AchFET is an enzyme field effect transistor (ENFET) fabricated by immobiliz...

A single polyaniline nanofiber field effect transistor (FET) gas sensor fabricated by means of electrospinning was investigated to understand its sensing mechanisms and optimize its performance. We studied the morphology, field effect characteristics and gas sensitivity of conductive nanofibers. The fibers showed Schottky and Ohmic contacts based on different electrode materials. Higher applied...