نتایج جستجو برای: ion sensitive field effect transistor
تعداد نتایج: 2722734 فیلتر نتایج به سال:
Electrical interfacing of semiconductor devices with ion channels is the basis for a development of neuroelectronic systems and of cell-based biospecific electronic sensors. To elucidate the mechanism of cell–chip coupling, we studied the voltage-gated potassium channel Kv1.3 in HEK 293 cells on field-effect transistors in silicon with a metal-free gate of silicon dioxide. Upon intracellular de...
We fabricated a pH-sensitive device on a glass substrate based on properties of carbon nanotubes. Nanotubes were immobilized specifically on chemically modified areas on a substrate followed by deposition of metallic source and drain electrodes on the area. Some nanotubes connected the source and drain electrodes. A top gate electrode was fabricated on an insulating layer of silane coupling age...
InxGa1-xSb is an attractive candidate for high performance III-V p-metal-oxide-semiconductor field effect transistors (pMOSFETs) due to its high bulk hole mobility that can be further enhanced with the use of strain. We fabricate and study InxGa1 xSb-channel pMOSFETs with atomic layer deposition Al2O3 dielectric and self-aligned source/drain formed by ion implantation. The effects of strain and...
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