نتایج جستجو برای: lattice strain
تعداد نتایج: 309150 فیلتر نتایج به سال:
The movement of dislocations in a crystal is the key mechanism for plastic deformation in all materials. Studies of dislocations have focused on three-dimensional materials, and there is little experimental evidence regarding the dynamics of dislocations and their impact at the atomic level on the lattice structure of graphene. We studied the dynamics of dislocation pairs in graphene, recorded ...
We have used x-ray diffraction with subnanosecond temporal resolution to measure the lattice parameters of orthogonal planes in shock compressed single crystals of silicon (Si) and copper (Cu). Despite uniaxial compression along the (400) direction of Si reducing the lattice spacing by nearly 11%, no observable changes occur in planes with normals orthogonal to the shock propagation direction. ...
گازوئیل که یکی از محصولات عمده نفت خام است، منبع عمده آلودگی محیط زیست به شمار می رود و می تواند اثرات خطرناک زیستی بر محیط اطراف اعمال کند. یکی از روش های بازیابی این مناطق آلوده و وارد نمودن آنها در چرخه تولید محصول سالم، حذف آلاینده ها با روش های زیستی است که از این میان روش تجزیه زیستی با توجه به استفاده از توان طبیعی و پتانسیل های نهفته طبیعت و هزینه پایین بیشتر مورد توجه بوده است. در ای...
Lattice deformations of InAs self-assembled quantum dots, which were grown on (001) GaAs substrates and embedded in GaNAs strain compensating layers (SCLs), were examined with an ion-channeling method in Rutherford backscattering spectrometry. The channeling experiments demonstrated that the increase of the nitrogen concentrations in the GaNAs SCLs caused the indium lattice displacements along ...
We formulate a variational model for a geometrically necessary screw dislocation in an anti-plane lattice model at zero temperature. Invariance of the energy functional under lattice symmetries renders the problem non-coercive. Nevertheless, by establishing coercivity with respect to the elastic strain and a concentration compactness principle, we prove existence of a global energy minimiser an...
The electronic structure of interfaces between lattice-mismatched semiconductor is sensitive to the strain. We compare two approaches for calculating such inhomogeneous strain – continuum elasticity (CE, treated as a finite difference problem) and atomistic elasticity (AE). While for small strain the two methods must agree, for the large strains that exist between latticemismatched III-V semico...
The density of states and the AC conductivity of graphene under uniform strain are calculated using a new Dirac Hamiltonian that takes into account the main three ingredients that change the electronic properties of strained graphene: the real displacement of the Fermi energy, the reciprocal lattice strain and the changes in the overlap of atomic orbitals. Our simple analytical expressions for ...
We report on polarization dependent optical absorption for excitonic and interband transitions in lattice matched (GaAs/AlGaAs) and strained (biaxial tensile strain GaAsP/AlGaAs; biaxial compressive strain InGaAs/AlGaAs) multiquantum well structures in the presence of transverse electric fields. The hole states are solved by using the Kohn-Luttinger Hamiltonian and using an eigenvalue technique...
A study of the fine rnicrostructure of boronated pyrolytic graphite was made utilizing optical and X-ray diffraction techniques. The influence of boron content on the laminar structure, the lattice parameter, the lattice strain, the particle size, and the flexural strength of pyrolytic graphite were studied. Significant changes in the behavior of all investigated parameters were observed in the...
Dark-field electron holography maps strain in crystal lattices into reconstructed phases over large fields of view. Here we investigate the details of the lattice strain-reconstructed phase relationship by applying dynamic scattering theory both analytically and numerically. We develop efficient analytic linear projection rules for 3D strain fields, facilitating a straight-forward calculation o...
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