An electrochemical surface treatment has been developed that decreases the reverse-bias leakage current in Schottky diodes fabricated on GaN grown by molecular-beam epitaxy ~MBE!. This treatment suppresses current flow through localized leakage paths present in MBE-grown GaN, while leaving other diode characteristics, such as the Schottky barrier height, largely unaffected. A reduction in leaka...

Previous work in leakage current reduction for digital circuits can be divided into two main categories: static design-time selection of slow, low-leakage transistors for non-critical paths and dynamic deactivation of fast leaky transistors on critical paths. Leakage power is dominated by critical paths, and hence dynamic deactivation of fast transistors could potentially yield large savings. W...

–Cache is fastest memory which is played vital role in the present trend.Cache is achieved by SRAM. The scaling of CMOS technology has significant impact on SRAM cell -random fluctuation of electrical characteristics and substantial leakage current. In this paper we proposed dynamic column based power supply 8T SRAM cell to improve the read stability and low leakage. In this paper we compare th...

In this paper we propose a new model for leakage mechanism in tail-mode bits of DRAM data retention characteristics. For main-mode bits, leakage current can be attributed to junction thermal-generation leakage current. For tail-mode bits, it is found for the first time that Gate-Induced Drain Leakage (GIDL) current has a dominant impact. The root cause is electric field enhancement caused by me...

The central motor pattern for heartbeat in the medicinal leech is based upon the alternating bursting activity of mutually inhibitory pairs of heart interneurons (HNs). When pharmacologically isolated, these neurons spike tonically. Using a canonical model of an HN cell (Nadim et al., J. Comput. Neurosci. 2 (1995) 215}235) as a starting point, we generated three models, possessing di!erent subs...

A low-leakage 2×VDD-tolerant power-rail electrostatic discharge (ESD) clamp circuit composed of the siliconcontrolled rectifier (SCR) device and new ESD detection circuit, realized with only thin-oxide 1× VDD devices, has been proposed with consideration of gate leakage current. By reducing the voltage across the gate oxides of the devices in the ESD detection circuit, the whole power-rail ESD ...

This paper deals with an inspection of defects including corrosion and leakage by Acoustic Emission (AE) in an oil tank floor. In contrast to intrusive methods such as magnetic flux leakage, eddy current or ultrasonic, there is no need to emptying and entering the tank in AE method in order to inspection. In this research AE investigation and AE source location is presented in detail. The resul...

In this paper, a new circuit scheme is proposed to reduce the power consumption of dynamic circuits. In the proposed circuit, an NMOS keeper transistor is used to maintain the voltage level in the output node against charge sharing, leakage current and noise sources. Using the proposed keeper scheme, the voltage swing on the dynamic node is lowered to reduce the power consumption of wide fan-in...

By first principles atomistic analysis we demonstrate how controlled localized doping distributions in nanoscale Si transistors can suppress leakage currents. We consider dopants (B and P atoms) to be randomly confined to a ≈1  nm width doping region in the channel. If this region is located away from the electrodes, roughly 20% of the channel length L, the tunneling leakage is reduced 2× compa...

In CMOS circuits, as the technology scales down to nanoscale, the sub-threshold leakage current increases with the decrease in the threshold voltage. LECTOR, a technique to tackle the leakage problem in CMOS circuits, uses two additional leakage control transistors, which are self-controlled, in a path from supply to ground which provides the additional resistance thereby reducing the leakage c...