نتایج جستجو برای: lightly doped drain and source ldds
تعداد نتایج: 16884870 فیلتر نتایج به سال:
It was recently demonstrated that the anisotropic phonon heat transport behavior is a good probe of the stripe formation in La(2-x)Sr(x)CuO(4) (LSCO) [Phys. Rev. B 67, 104503 (2003)]]. Using this probe, we examined an electron-doped cuprate Pr(1.3-x)La(0.7)Ce(x)CuO(4) (PLCCO) and found that essentially the same features as those in LSCO are observed. Moreover, the in-plane resistivity rho(ab) o...
We present a combined study of the angle-resolved-photoemission spectroscopy (ARPES) and quantum Monte Carlo simulations to propose a novel polaronic metallic state in underdoped cuprates. An approximation scheme is proposed to represent underdoped cuprates away from 1/2 filling, replacing the many-body Hamiltonian by that of a single polaron with effective electron-phonon interaction (EPI), th...
Abstract We perform a rigorous study on the conduction characteristics of long, low doped and relatively thick p-type silicon nanowire (SiNW) with different bias polarities/strengths to find out origin non-linear electrical applicable window for ensuring gate responsive operation as biosensor. Depending polarity strength drain (V DS )/liquid voltage GS ), is found be confined in bulk, surface a...
We report on non resonant detection of sub-terahertz radiation (148-353 GHz) using strained silicon modulation field effect transistor with different gate lengths. The devices were excited at room temperature by a Backward Wave Oscillator (BWO) source. Enhancement of the photoresponse signal by drain-to-source bias was observed. Increasing drain-to-source voltage leads to asymmetry between the ...
A new output structure for class E power amplifier (PA) is proposed in this paper. A series LC resonator circuit, tuned near the second harmonic of the operating frequency is added to the output circuit. This resonator causes low impedance at the second harmonic. The output circuit is designed to shape the switch voltage of the class E amplifier and lower the voltage stress of the transistor. T...
Point-defect kinetics are important for understanding and modeling dopant diffusion in silicon. This paper describes models for point-defect transport and recombination used in SUPREM-IV, and does extensive fitting for the model parameters. The experimental data used are from experiments on oxidation-enhanced diffusion (OED). Interstitial traps are shown to be critical for consistent agreement ...
The lightly doped La2CuO4 of the high temperature superconducting Cu oxides shows spin glass behavior at very low temperatures, which reflects the effects of quantum fluctuations and frustration upon doping. Recent neutron scattering experiments revealed a formation of spin stripes at the same low concentration of doping. A specific relation between the two important properties of spin glass be...
A new technique has been developed for measuring the T1 spin lifetime of electrons, and should have near universal applicability among III–V semiconductors. The technique has been applied to a lightly doped GaAs sample with n = 3 × 1014 cm−3. Spin decays were measured for fields from 0.5 to 7 T, at temperatures of 1.5 and 5 K. The spin lifetimes were shorter than expected, possibly due to compe...
Nanowires are strong candidates as potential replacements for Bulk MOSFET architectures due to their better electrostatic integrity and performance. Impurity scattering is the source of series resistance that degrades the performance of small, doped nanowire transistors. In this work we have used a silicon nanowire transistor to investigate the inclusion of series resistance in quantum transpor...
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