The distorted octahedral complexes [SnCl4{ BuSe(CH2)nSe Bu}] (n = 2 or 3), (1) and (2), obtained from reaction of SnCl4 with the neutral bidentate ligands and characterized by IR/Raman and multinuclear (H, Se{H} and Sn) NMR spectroscopy and X-ray crystallography, serve as very effective single source precursors for low pressure chemical vapor deposition (LPCVD) of microcrystalline, single phase...

To meet the gate leakage specifications in the International Technology Roadmap for Semiconductors (ITRS), an intensive search is being conducted for alternative gate stack materials. Most of the studies have focused on basic material properties, but very little effort has been directed towards quantifying and understanding the effect of post metallization annealing (PMA) on the electrical prop...

The confinement of the modern day semiconductor devices is fast propelling the growth of nanoparticles as an excellent constituent of such device and the characteristics like quantum size confinement and coulomb blockade effect of the same is accelerating their application in this field. But before the fabrication of devices with the nanoparticles, their morphological and electrical characteris...

Kongetira, Poonacha. MSEE., Purdue University, August 1994. Modelling of Selective Epitaxial Growth(SEG) and Epitaxial Lateral Overgrowth( ELO) of Silicon in SiH2C12-HC1-H2 system. Major Professor: Gerold W. Neudeck. A semi-empirical model for the growth rate of selective epitaxial silicon(SEG) in the Dichlorosilane-HC1-Hz system that represents the experimenltal data has been presented. All ep...

The requirements for a micromorph tandem cell front transparent conductive oxide (TCO) are multiple. This essential layer needs a high transparency, excellent conduction, strong light scattering into silicon and good surface morphology for the subsequent growth of silicon cells. These parameters are all linked and trade-offs have to be found for optimal layer. The optimum combination, taking in...

The processes for the neuronal microneedle are performed with only one ordinary double-polished (100) silicon wafer. The buried microchannel in the neuronal microneedle is fabricated using the processes of anisotropic dry etching, sidewall passivation, isotropic dry etching, and trench-refilling with a LPCVD polysilicon film. Because the microchannel fabrication process in this thesis uses the ...

AbstmctMembranes supported by posts are used as vibrating elements of capacitive micromachined ultrasonic transducers (CMUTs). The residual stress built up during the fabrication process determines the transducer properties such as resonance frequency, collapse voltage, and gap distance. Hence, it is important t o evaluate and control the stress in thin film CMUT membranes. The residual stress ...

Polycrystalline GexSi1-x can be grown from a mixture of SiH4 and GeH4 as reactive gases in a conventional LPCVD system. Several major problems make the growth of polycrystalline GexSi1-x more difficult with respect to poly-Si growth. Firstly, the initial formation of the GexSi1-x nuclei on the SiO2 surface is retarded. The incubation time, depending on deposition conditions, varies from a few s...

To improve the thermal and mechanical stability of SiCf/SiC or C/SiC composites with SiBN interphase, SiBN coating was deposited by low pressure chemical vapor deposition (LPCVD) using SiCl₄-BCl₃-NH₃-H₂-Ar gas system. The effect of the SiCl₄ flow rate on deposition kinetics was investigated. Results show that deposition rate increases at first and then decreases with the increase of the SiCl₄ f...

Major steps used in fabricating surface micromachined capacitive ultrasonic immersion transducers are investigated in this paper. Such steps include membrane formation and cavity sealing under vacuum. Three transducer membrane structures are evaluated: a nitride membrane with an LTO sacrificial layer; a polysilicon membrane with an LTO sacrificial layer; and a nitride membrane with a polysilico...