Hematite (α-Fe(2)O(3)) is a promising candidate for photoelectrochemical splitting of water. However, its intrinsically poor conductivity is a major drawback. Doping hematite to make it either p-type or n-type enhances its measured conductivity. We use quantum mechanics to understand how titanium, zirconium, silicon, or germanium n-type doping affects the electron transport mechanism in hematit...

Current semiconductor devices have been scaled to such dimensions that we need take an atomistic approach to understand their characteristics. The atomistic nature of these devices provides us with a tool to study the physics of very small ensembles of dopants right up to the limit of a single atom. Control and understanding of a dopants wavefunction and its coupling to the environment in a nan...

We have theoretically studied the possibility to control the equilibrium solubility of dopants in semiconductor alloys, by strategic tuning of the alloy concentration. From the modeled cases of C(0) in Si(x)Ge(1-x), Zn(-) and Cd(-) in Ga(x)In(1-x)P it is seen that under certain conditions the dopant solubility can be orders of magnitude higher in an alloy or multilayer than in either of the ele...

Understanding the modification of the graphene's electronic structure upon doping is crucial for enlarging its potential applications. We present a study of nitrogen-doped graphene samples on SiC(000) combining angle-resolved photoelectron spectroscopy, scanning tunneling microscopy and spectroscopy and X-ray photoelectron spectroscopy (XPS). The comparison between tunneling and angle-resolved ...

Variability in device characteristics will affect the scaling and integration of next generation nano-CMOS transistors. Intrinsic parameter fluctuations introduced by random discrete dopants, line edge roughness and oxide thickness fluctuations are among the most important sources of variability. In this paper the variability introduced by the above sources is studied in a set of well scaled MO...

Controlling an assembly of colloidal particles under external forces can be helpful in developing soft nanomaterials with novel functionalities. How external impurities organize within such confined systems is of fundamental and technological interest, especially when the system sizes are so small that even a single dopant can interact with an appreciable fraction of the system. To address this...

Potential barriers around quantum dots (QDs) play a key role in kinetics of photoelectrons. These barriers are always created, when electrons from dopants outside QDs fill the dots. Potential barriers suppress the capture processes of photoelectrons and increase the photoresponse. To directly investigate the effect of potential barriers on photoelectron kinetics, we fabricated several QD struct...

HoMnO3 and its La and Y doped compounds Ho0.67La0.33MnO3 and Ho0.67Y0.33MnO3 are investigated for their structural and thermoelectric transport properties. Small bandgaps of these compounds, as investigated by first principles calculations, make them suitable for application in thermoelectric devices. It is found that the bandgap of pure HoMnO3 increases with La and Y dopants. Thermoelectric pa...

Chemical doping in p-conjugated organic semiconductors, which involves a redox reaction between a host p-conjugated material and a dopant, is achieved by either co-evaporation, co-dissolved solution, or exposure to a dopant gas. Here, we demonstrate a new route for molecular doping; a thiophene-based semiconducting polymer film can be doped with dopants dispersed in an orthogonal solvent. An in...

As the ultimate miniaturization of semiconductor devices approaches, it is imperative that the effects of single dopants be clarified. Beyond providing insight into functions and limitations of conventional devices, such information enables identification of new device concepts. Investigating single dopants requires sub-nanometre spatial resolution, making scanning tunnelling microscopy an idea...