نتایج جستجو برای: microwave devices

تعداد نتایج: 248492  

2009

Recent rapid development of electromagnetic field (EMF) emitters (mobile phones, microwave broadcast stations, radiolocation, microwave sources in household devices) increased the environmental level of electromagnetic radiation. This, in turn, increased the interest on the possible risk of harmful influence of exposure to EMF. On the other hand, the low energy EMF of both low (homogenous magne...

2009
A. del Alamo Yuji Awano

InAlAs/InGaAs Modulation-Doped Field-Effect Transistors (MODFETs) on InP have recently emerged as an optimum choice for a variety of microwave and photonics applications. This is because the outstanding transport properties of InGaAs have yielded devices with very low-noise and high-frequency characteristics. Unfortunately, the low breakdown voltage of InAlAs/InGaAs MODFETs on InP (typically le...

Journal: :The Review of scientific instruments 2015
Wei-Cheng Kong Guang-Wei Deng Shu-Xiao Li Hai-Ou Li Gang Cao Ming Xiao Guo-Ping Guo

We report a technique that can noninvasively add multiple DC wires into a 3D superconducting microwave cavity for electronic devices that require DC electrical terminals. We studied the influence of our DC lines on the cavity performance systematically. We found that the quality factor of the cavity is reduced if any of the components of the electrical wires cross the cavity equipotential plane...

Journal: :Nanotechnology 2014
Fei Wang Nicolas Clément Damien Ducatteau David Troadec Hassan Tanbakuchi Bernard Legrand Gilles Dambrine Didier Théron

We present a method to characterize sub-10 nm capacitors and tunnel junctions by interferometric scanning microwave microscopy (iSMM) at 7.8 GHz. At such device scaling, the small water meniscus surrounding the iSMM tip should be reduced by proper tip tuning. Quantitative impedance characterization of attofarad range capacitors is achieved using an 'on-chip' calibration kit facing thousands of ...

2007
T. Gorman S. Haxha

In this study we compare the relative merits of Z-cut and X-cut lithium niobate (LN) electrooptic modulators. The finite element method (FEM) has been used to implement a full wave analysis of the two structures and determine the microwave effective index Nm, the characteristic impedance Zc, the microwave losses αc and the half wave voltage VπL, operating at frequency range from 0.1 to 100GHz. ...

1996
Kiran Hebbar Dana S. Nau

This paper describes EDAPS, an integrated system for designing and planning the manufacture of microwave modules. Microwave modules are complex devices having both electrical and mechanical properties, and EDAPS integrates electrical design, mechanical design, and process planning for both the mechanical and electrical domains. Since EDAPS generates process plans concurrently with design, we ar...

2015
John S. Ho Brynan Qiu Yuji Tanabe Alexander J. Yeh Shanhui Fan S. Y. Poon

The solid immersion lens is a powerful optical tool that allows light entering material from air or vacuum to focus to a spot much smaller than the free-space wavelength. Conventionally, however, they rely on semispherical topographies and are non-planar and bulky, which limits their integration in many applications. Recently, there has been considerable interest in using planar structures, ref...

Journal: :Science 1980
J M Woodall

The III-V compounds and alloys have been studied for three decades. Until recently, these materials have been commercialized for only a few specialized optoelectronic devices and microwave devices. Advances in thin-film epitaxy techniques, such as liquid phase epitaxy and chemical vapor deposition, are now providing the ability to form good quality lattice-matched heterojunctions with III-V mat...

2003
Markos Georganopoulos

I present here a short personal view of our understanding of the Chandra detected knots and hot spots of powerful Fanaroff Rilley (FR) II radio galaxies and quasars in the context of leptonic models. Observations of the knots and hot spots strongly suggest that the jets in these powerful sources retain their relativistic velocities at large scales, all the way to the hot spots. The emission mec...

2000
Troels Emil Kolding Ole Kiel Jensen Torben Larsen

This paper presents a new test fixture with associated deembedding procedure for effecient and accurate on-wafer device measurements at microwave frequencies. The fixture is based on a substrate shield and (i) provides an accurate common ground for N-port measurements, (ii) effectively reduces substrate carried coupling, (iii) gives well-defined parasitics for simplified de-embedding, and (iv) ...

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