Zinc oxide (ZnO) and bacteriorhodopsin (bR) hybrid nanostructures were fabricated by immobilizing bR on ZnO thin films and ZnO nanorods. The morphological and spectroscopic analysis of the hybrid structures confirmed the ZnO thin film/nanorod growth and functional properties of bR. The photoactivity results of the bR protein further corroborated the sustainability of its charge transport proper...

Si-ZnO thin-film transistors were fabricated using atomic layer deposition (ALD) then annealed in oxygen at 400°C for 1 hour and are demonstrated. Hexagonal wurtzite structure ZnO was presented all films, with a primary diffracted peak the (100) direction regardless of annealing treatment. First-principle density functional theory (DFT) calculations supported observed crystalline characteristic...

Ga-doped ZnO (GZO) thin films were prepared by pulsed laser deposition (PLD) method on a large substrate at room temperature in vacuum. Two regions of apparently different optical transmittance were found in the deposited area, and their properties such as thickness, sheet resistance, optical and electrical properties and composition ratio were measured. The transparent region has low sheet res...

We report on the fabrication of coplanar dual-gate ZnO thin-film transistors with 200-nm thickness SiNx for both top and bottom dielectrics. The ZnO film was deposited by RF magnetron sputtering on SiO2/Si substrates at 100◦C. And the thickness of ZnO film is compared with 100-nm and 40-nm. This TFT has a channel width of 100-μm and channel length of 5-μm. The fabricated coplanar dual-gate ZnO ...

Transparent indium-doped ZnO thin films were deposited by the spray pyrolysis method onto glass substrates. The content of indium in the starting solution was 0.5 at. %. The crystallographic structure of the film was studied by X-ray diffraction (XRD). XRD measurement shows that the film is crystallized in the wurtzite phase and presents a preferential orientation along the c-axis. The texture ...

We generated a novel amorphous oxide semiconductor thin film transistor (AOS-TFT) that has exellent bias-stress stability using solution-processed gallium tin zinc oxide (GSZO) layers as the channel. The cause of the resulting stable operation against the gate bias-stress was studied by comparing the TFT characteristics of the GSZO layer with a tin-doped ZnO (ZTO) layer that lacks gallium. By p...

p-type Sb-doped ZnO (ZnO:Sb)/n-type Ga-doped ZnO (ZnO:Ga) junctions were grown on c-plane sapphire substrates using plasma-assisted molecular-beam epitaxy. Mesa geometry light emitting diodes (LEDs) were fabricated using standard photolithography and lift-off process, with ohmic contacts achieved using Au/Ni and Au/Ti for top ZnO:Sb and bottom ZnO:Ga layers, respectively. Rectifying current–vol...

We report a rapid, self-catalyzed, solid precursor-based thermal plasma chemical vapor deposition process for depositing a conformal, nonporous, and optically transparent nanocrystalline ZnO thin film at 130 Torr (0.17 atm). Pure solid zinc is inductively heated and melted, followed by ionization by thermal induction argon/oxygen plasma to produce conformal, nonporous nanocrystalline ZnO films ...

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