A prototype of a 3-V SiGe direct-conversion receiver integrated circuit for use in third-generation (3G) WCDMA mobile cellular systems has been completed. The goal of its design was to minimize current draw while meeting WCDMA receiver rf specifications with margin. The design includes a bypassable low-noise amplifier, quadrature downconverter, and first-stage variable-gain baseband amplifiers ...

Development of Millimeter Wave Integrated-Circuit Interferometric Sensors for Industrial Sensing Applications. (December 2004) Seoktae Kim, B.S., Inha University, S. Korea; M.S., Pohang University of Science and Technology, S. Korea Chair of Advisory Committee: Dr. Cam Nguyen New millimeter wave interferometric, multifunctional sensors have been studied for industrial sensing applications: disp...

The monolithic integration of enhancementand depletion-mode (Eand D-mode) high electron mobility transistors (HEMTs) lattice-matched to InP is of interest in the area of circuits for low power, high speed communications. When compared to circuits implemented in depletion-mode @-mode) only technology, circuits implemented in ED-mode technology enjoy a number of advantages. D-mode only circuits r...

A newly fabricated Mcaolithic InGaAs Active Pixel Image Sensor’z is presented, and its readout characteristics are described. The sensor is fabricated fhrn InCfiAs epitaxirdly deposited on an InP substrate. It consists of an InGaAs photodiode connected to InP depletion-mode Junction field effect transistors (J-s) for signal buffering, selection and reset. The monolithic sensor eliminates the ne...

A clock recovery circuit is a key component in optical communication systems. In this paper, an optoelectronic clock recovery circuit is reported that monolithically integrates a resonant tunneling diode (RTD) and a uni-traveling-carrier photodiode (UTC-PD). The circuit is an injection-locked-type RTD oscillator that uses the photo-current generated by the UTC-PD. Fundamental and sub-harmonic c...

We are developing prototype chip-scale low-power integrated-optic gas-phase chemical sensors based on infrared Tunable Diode Laser Absorption Spectroscopy (TDLAS). TDLAS is able to sense many gas phase chemicals with high sensitivity and selectivity. Using semiconductor fabrication and assembly techniques, the low-cost integrated optic TDLAS technology will permit mass production of sensors tha...

Gallium–nitride power transistor (GaN HEMT) and integrated circuit technologies have matured dramatically over the last few years, and many hundreds of thousands of devices have been manufactured and elded in applications ranging from pulsed radars and counter-IED jammers to CATV modules and fourth-generation infrastructure base-stations. GaN HEMT devices, exhibiting high power densities coupl...

We have designed a process-insensitive preamplifier for an optical receiver, fabricated it in several different minimum feature sizes of standard digital CMOS, and demonstrated design scaleability of this analog integrated circuit design. The same amplifier was fabricated in a 1.2 μm and two different 0.8 μm processes through the MOSIS foundry [1]. The amplifier uses a multistage, low-gain-per-...