The purpose of this study was to ensure accuracy in radiation dose delivery, external dosimetry quality audit has an equal importance with routine dosimetry performed at clinics. To do so, dosimetry quality audit was organized by the Secondary Standard Dosimetry Laboratory (SSDL) of Pakistan Institute of Nuclear Science and Technology (PINSTECH) at the national level to investigate and minimize...

When performing dose measurements on an X-ray device with multiple angles of irradiation, it is necessary to take the angular dependence of metal-oxide-semiconductor field-effect transistor (MOSFET) dosimeters into account. The objective of this study was to investigate the angular sensitivity dependence of MOSFET dosimeters in three rotational axes measured free-in-air and in soft-tissue equiv...

background: thermoluminescence dosimetry is one of the dosimetry procedures used widely as routine and personal dosimeters. in order to extend this kind of dosimeters, dental tissue has been examined and was found promising as a tld dosimeter. materials and methods : in this study, 70 health teeth were collected. the only criterion, which was considered for selection of the teeth, was the healt...

A full-band Monte Carlo (MC) device simulator has been used to study the effects of device scaling on hot electrons in different types of n-channel metal-oxide-semiconductor fieldeffect transistor (MOSFET) structures. Simulated devices include a conventional MOSFET with a single source/drain implant, a lightly-doped drain (LDD) MOSFET, a silicon-on-insulator (SOI) MOSFET, and a MOSFET built on ...

The main features of the industry standard compact model HiSIM-HV for high-voltage MOSFETs are described. The basis of HiSIM-HV is a consistent physically correct potential determination in the MOSFET core and the surrounding drift regions, providing the high-voltage capabilities. Consequently, HiSIM-HV can accurately calculate the physical potential distribution in the entire asymmetric LDMOS ...

In this article we describe commissioning and implementation procedures for the Dose Verification System (DVS) with permanently implanted in vivo wireless, telemetric radiation dosimeters for absolute dose measurements. The dosimeter uses a semiconductor device called a metal-oxide semiconductor field-effect transistor (MOSFET) to measure radiation dose. A MOSFET is a transistor that is general...

In general, the Brushless DC motor speed controller uses an Atmega 16 microcontroller and a MOSFET, which often increases MOSFET's temperature, especially when is loaded. This article discusses use of IC NE555 CD4017 as frequency regulator to MOSFET gate by periodically igniting forward voltage from change in potentiometer value. We carried out test unloaded state with variations 2.5 Vac, 7.5 1...

Self-consistent full-band Monte Carlo simulations are employed to compare the performance of nanoscale strained-Si single-gate (SG) and unstrained-Si double-gate (DG) MOSFETs for a gate length of 25 nm. Almost the same on-current as in the DG-MOSFET can be achieved by strain in a SG-MOSFET for the same gate overdrive. This is due to the compensation of the higher electron sheet density in the t...

PURPOSE To present the results and discuss potential insights gained through surveys on reference dosimetry practices. METHODS Two surveys were sent to medical physicists to learn about the current state of reference dosimetry practices at radiation oncology clinics worldwide. A short survey designed to maximize response rate was made publicly available and distributed via the AAPM website an...

Some of the more relevant recent achievements and developments in the field of external radiation dosimetry are reviewed in this presentation. Among them, topics related to personal dosimetry, as the relative role of active and passive methods and the features of some recently proposed new methods. Electronic personal dosemeters and Optically Stimulated Luminescence, OSL, have already accredite...