نتایج جستجو برای: nanoelectronic
تعداد نتایج: 778 فیلتر نتایج به سال:
We realize a magnetic skyrmion diode operated by unidirectional transport that flows in only one direction, which is highly significant for information processing spintronic and nanoelectronic devices. easily control the engineering asymmetric shapes of geometric structures. Here, we present simple method to describe underlying mechanism behind characterizing topography potential energy surface...
Using CNT network sensors as our working example, we review AFM-based techniques which are used to study and engineer nanoelectronic devices. We have used dc-EFM and ac-EFM to identify the locations and resistances of individual CNTs that are electrically connected in parallel. Next, 5GM and tm-SGM were used to reveal the semiconducting response of each CNT. With the information available in th...
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Controlling and understanding the interface formation between organic molecular layers and ferromagnetic materials is a crucial aspect in the implementation of organic spintronics. Here, the formation of thiol-containing molecular monolayers on template-stripped cobalt and oxidized cobalt surfaces is achieved. The successful attachment and quality of the aliphatic molecular structure and cobalt...
In this paper a hybrid circuit is presented which comprises nanoelectronic resistive switches based on the electrochemical memory effect (ECM) as well as devices from a standard 40nm-CMOS process. A closed ECM device model, which is based on device physics, was used for simulations allowing for a precise prediction of the expected I-V characteristics. The device is used as a non-volatile and/or...
Implanted brain electrodes construct the only means to electrically interface with individual neurons in vivo, but their recording efficacy and biocompatibility pose limitations on scientific and clinical applications. We showed that nanoelectronic thread (NET) electrodes with subcellular dimensions, ultraflexibility, and cellular surgical footprints form reliable, glial scar-free neural integr...
We report on nanoelectronic device applications of a nonalloyed contact structure which utilizes a surface layer of low-temperature grown GaAs as a chemically stable surface. In contrast to typical ex situ ohmic contacts formed on n-type semiconductors such as GaAs, this approach can provide uniform contact interfaces which are essentially planar injectors, making them suitable as contacts to s...
This thesis describes investigations in relation to the search for materials with high dielectric constant, k, for future CMOS transistors. The most elementary quantities to be considered are k-value and energy band offsets between the dielectric and the silicon crystal on which it is deposited. Empirical relations for these two quantities are presented demonstrating that only a few dielectrics...
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