Solution-processed silver nanowire networks are one of the promising candidates to replace a traditional indium tin oxide as next-generation transparent and flexible electrodes due to their ease of processing, moderate flexibility, high transparency, and low sheet resistance. To date, however, high stability of the nanowire networks remains a major challenge because the long-term usages of thes...

The efficient detection of charged biomolecules by biosensor with appropriate semiconducting nanomaterials and with optimum device geometry has caught tremendous research interest in the present decade. Here, the performance of various label-free electronic biosensors to detect bio-molecules is investigated by simulation technique. Silicon nanowire sensor, nanosphere sensor and double gate fiel...

Semiconductor nanowire arrays are reproducible and rational platforms for the realization of high performing designs of light emitting diodes and photovoltaic devices. In this paper we present an overview of the growth challenges of III-V nanowire arrays obtained by molecular beam epitaxy and the design of III-V nanowire arrays on silicon for solar cells. While InAs tends to grow in a relativel...

Biodegradable scaffolds play an important adjunct role in transplantation of retinal progenitor cells (RPCs) to the subretinal space. Poly(ε-Caprolactone) (PCL) scaffolds with different modifications were subretinally implanted in 28 porcine eyes and evaluated by multifocal electroretinography (mfERG) and histology after 6 weeks of observation. PCL Short Nanowire, PCL Electrospun, and PCL Smoot...

In this Research Article, we demonstrate pulsed laser processing of a silver nanowire network transparent conductor on top of an otherwise complete solar cell. The macroscopic pulsed laser irradiation serves to sinter nanowire-nanowire junctions on the nanoscale, leading to a much more conductive electrode. We fabricate hybrid silicon/organic heterojunction photovoltaic devices, which have ITO-...

Nanoscale multigate field effect transistors (FETs) are potentially next-generation device candidates for achieving high performance targets of the ITRS due to their superior reduction of the short channel effects and excellent compatibility with planar CMOS fabrication process [1, 2]. In this work, we for the first time numerically explore the high frequency characteristics of the sub-45nm sil...

We report the first observation of negative photoconductance (NPC) in n- and p-doped Si nanowire field-effect transistors (FETs) and demonstrate the strong influence of doping concentrations on the nonconventional optical switching of the devices. Furthermore, we show that the NPC of Si nanowire FETs is dependent on the wavelength of visible light due to the phonon-assisted excitation to multip...

SnTe has attracted worldwide interest since its theoretical predication as topological crystalline insulator. Because of promising applications of one-dimensional topological insulator in nanoscale electronics and spintronics device, it is very important to realize the observation of topological surface states in one-dimensional SnTe. In this work, for the first time we successfully synthesized...

We report a top-down process for the fabrication of single-crystalline silicon nanowire circuits and devices. Local oxidation nanolithography is applied to define very narrow oxide masks on top of a silicon-on-insulator substrate. In a plasma etching, the nano-oxide mask generates a nanowire with a rectangular section. The nanowire width coincides with the lateral size of the mask. In this way,...

We report a facile approach for the preparation of the vertically aligned, large scale CdS/p-Si shell/core nanowire heterojunction arrays based on successive ionic layer adsorption and reaction deposition. The results indicate that the rectifying characteristics of CdS/Si shell/core nanowire arrays can be tailored by changing the number of SILAR cycles, and the CdS/Si shell-core nanowire hetero...