We introduce a new way of approximating initial condition to the semidiscrete finite element method for integro-differential equations using any degree of elements. We obtain several superconvergence results for the error between the approximate solution and the Ritz-Volterra projection of the exact solution. For k > 1, we obtain first order gain in Lp(2≤ p ≤∞) norm, second order in W1,p(2≤ p ≤...

The electric behavior in semiconductor devices is the result of carriers’ injection and evacuation low doping region, N-. carrier’s dynamic determined by ambipolar diffusion equation (ADE), which involves main physical phenomena region. ADE does not have a direct analytic solution since it spatio-temporal second-order differential equation. numerical most used, but inadequate to be integrated i...