The fabrication of nanowire (NW) devices on diverse substrates is necessary for applications such as flexible electronics, conformable sensors, and transparent solar cells. Although NWs have been fabricated on plastic and glass by lithographic methods, the choice of device substrates is severely limited by the lithographic process temperature and substrate properties. Here we report three new t...

High-quality growth of planar GaAs nanowires (NWs) with widths as small as 35 nm is realized by comprehensively mapping the parameter space of group III flow, V/III ratio, and temperature as the size of the NWs scales down. Using a growth mode modulation scheme for the NW and thin film barrier layers, monolithically integrated AlGaAs barrier-all-around planar GaAs NW high electron mobility tran...

Using phosphorus-doped ZnO nanowire (NW) arrays grown on silicon substrate, energy conversion using the p-type ZnO NWs has been demonstrated for the first time. The p-type ZnO NWs produce positive output voltage pulses when scanned by a conductive atomic force microscope (AFM) in contact mode. The output voltage pulse is generated when the tip contacts the stretched side (positive piezoelectric...

A differential outcome results from rapid middle cerebral artery (MCA) occlusion in young normotensive Wistar (NW) rats as compared to the spontaneously hypertensive stroke-prone (SHRSP) rat. The SHRSP invariably infarcts; the NW usually does not. To determine if segregation at a single autosomal locus explains the difference between strains, a NW male was crossed with several SHRSP females to ...

The radio frequency (RF) performance of a III–V transistor comprised of nanowire (NW) high-electron mobility channels, grown by planar vapor–liquid–solid epitaxy in parallel arrays, is examined. An equivalent small-signal circuit model was used to study the contributing extrinsic and intrinsic passive elements on the NW performance as a function of bias and gate length (LG). Adequate intrinsic ...

Metallic nanowires (NW) coated with a high permittivity dielectric are proposed as means to strongly reduce the light scattering of the conducting NW, rendering them transparent at infrared wavelengths of interest in telecommunications. Based on a simple, universal law derived from electrostatics arguments, we find appropriate parameters to reduce the scattering efficiency of hybrid metal-diele...

We investigate the inhibited spontaneous emission of telecom-band InAs quantum disks (Qdisks) in InP nanowires (NWs). We have evaluated how the inhibition is affected by different disk diameter and thickness. We also compared the inhibition in standing InP NWs and those NWs laying on silica (SiO(2)), and silicon (Si) substrates. We found that the inhibition is altered when we put the NW on the ...

Formation of a selective emitter in crystalline silicon solar cells improves photovoltaic conversion efficiency by decoupling emitter regions for light absorption (moderately doped) and metallization (degenerately doped). However, use of a selective emitter in silicon nanowire (Si NW) solar cells is technologically challenging because of difficulties in forming robust Ohmic contacts that interf...

n e s s g f t p c s a w ( Here, the wet and dry adhesion properties of hybrid Ge/parylene nanowire (NW) connectors are examined. The ability of the NW connectors to bind strongly even under lubricating conditions, such as mineral oil, sheds light on the dominant role of van der Waals interactions in the observed adhesion. The superhydrophobic surface of the NW connectors enables the wet, selfcl...

We show that for all given n, t, w ∈ {1, 2, . . .} with n < 2, an array of n entries of w bits each can be represented on a word RAM with a word length of w bits in at most nw + dn(t/(2w))e bits of uninitialized memory to support constant-time initialization of the whole array and O(t)-time reading and writing of individual array entries. At one end of this tradeoff, we achieve initialization a...