نتایج جستجو برای: optoelectronic device
تعداد نتایج: 684827 فیلتر نتایج به سال:
Because of increased interest in the development of integrated hybrid optoelectronic devices for use in photonic sensors and communication services, new methods for device fabrication by utilizing simple, fast and inexpensive process are highly desirable. In this regard, drying-mediated self-assembly of non-volatile solutes (polymers, nanocrystals, nanoparticles, nanorods and DNA) through irrev...
A cost-effective, highly compact, and versatile optoelectronic device constructed of two ordinary light emitting diodes compatible with optosensing films has been developed. This fibreless device containing chemoreceptor, semiconductor light source, and detector integrated in a miniaturized flow-through cell of low microliter internal volume works as a complete photometric chemical sensor suita...
Transparent conducting electrodes are essential components for numerous flexible optoelectronic devices, including touch screens and interactive electronics. Thin films of indium tin oxide-the prototypical transparent electrode material-demonstrate excellent electronic performances, but film brittleness, low infrared transmittance and low abundance limit suitability for certain industrial appli...
Organic π-conjugated molecules with extremely rich and tailorable electronic and optical properties are frequently utilized for the fabrication of optoelectronic devices. To achieve high solubility for facile solution processing and desirable softness for flexible device fabrication, the rigid π units were in most cases attached by alkyl chains through chemical modification. Considerable number...
For future on-chip communication schemes, it is essential to integrate nanoscale materials with an ultrafast optoelectronic functionality into high-frequency circuits. The atomically thin graphene has been widely demonstrated to be suitable for photovoltaic and optoelectronic devices because of its broadband optical absorption and its high electron mobility. Moreover, the ultrafast relaxation o...
Methods for spectrally controlling light absorption in optoelectronic devices have attracted considerable attention in recent years. It is now well known that a Fabry-Perot nanocavity comprising thin semiconductor and metal films can be used to absorb light at selected wavelengths. The absorption wavelength is controlled by tailoring the thickness of the nanocavity and also by nanostructure pat...
The p-n junction is the functional element of many electronic and optoelectronic devices, including diodes, bipolar transistors, photodetectors, light-emitting diodes and solar cells. In conventional p-n junctions, the adjacent p- and n-type regions of a semiconductor are formed by chemical doping. Ambipolar semiconductors, such as carbon nanotubes, nanowires and organic molecules, allow for p-...
This paper reports a lens-integrated liquid crystal display (LCD)-based optoelectronic tweezers (OET) system for interactive manipulation of polystyrene microspheres and blood cells by optically induced dielectrophoretic force. When a dynamic image pattern is projected into a specific area of a photoconductive layer in an OET, virtual electrodes are generated by spatially resolved illumination ...
Graphene has attracted considerable attention as a next-generation transparent conducting electrode, because of its high electrical conductivity and optical transparency. Various optoelectronic devices comprising graphene as a bottom electrode, such as organic light-emitting diodes (OLEDs), organic photovoltaics, quantum-dot LEDs, and light-emitting electrochemical cells, have recently been rep...
Light-Emitting Diodes and Defects affect the performance of an optoelectronic device in fundamental ways. Dong-Soo Shin Jong-In Shim (article number 2200042) demonstrate how macroscopic characterization can be utilized to obtain information on microscopic defects active region light-emitting diode. They successfully show that parameters such as ideality factor S-parameter are correlated with in...
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