Silicon phthalocyanines (R2-SiPcs) are a family of promising tunable materials for organic electronic applications. We report the chemistry synthesis axially substituted fluorinated SiPcs (tb-Ph)2-FxSiPc (where X = 0, 4, 8, or 16) and explore how degree fluorination effects optical properties. A new treatment with boron trichloride was included to obtain Cl2-FXSiPcs from F2-FXSiPcs, activating ...

A 10-layer stack of bipolar gate dielectric was formed by sequential layer-by-layer deposition using pulsed radio frequency (RF) plasma polymerization of allylamine and vinyl acetic acid monomers. Due to polar groups localized at the interfaces between each consecutive layer by alternating amine (–NH2) and carboxylic acid (–COOH) functional groups, a 60 nm thick multilayer structure demonstrate...

Sandrine Martin, Michael C. Hamilton and Jerzy Kanicki The University of Michigan, Department of Electrical Engineering and Computer Science, Solid-State Electronics Laboratory, 1067 BIRB, 2360 Bonisteel Blvd, Ann Arbor, MI 48109-2108, USA. ABSTRACT Organic polymer based thin-film transistors (OP-TFTs) look very promising for flexible organic electronics. In this paper, we describe devices base...

Carbon nanotubes and metal oxide semiconductors have emerged as important materials for p-type and n-type thin-film transistors, respectively; however, realizing sophisticated macroelectronics operating in complementary mode has been challenging due to the difficulty in making n-type carbon nanotube transistors and p-type metal oxide transistors. Here we report a hybrid integration of p-type ca...

New anthraquinone derivatives were prepared and used as active layers of organic field-effect transistors (OFETs); these devices showed good n-type characteristics and the quinones were found to be useful for organic semiconductors in OFETs.

We present a method of extracting the field-effect mobility from the transfer characteristics of organic polymer thin-film transistors (OP-TFTs), in both the linear and saturation regimes, by accounting for the dependence of the mobility on the gate bias, which translates to a dependence on the accumulated density of majority charge carriers in the channel. This method is compared to the common...

Developing alternative high dielectric constant (k) materials for use as gate dielectrics is essential for continued advances in conventional inorganic CMOS and organic thin film transistors (OTFTs). Thicker films of high-k materials suppress tunneling leakage currents while providing effective capacitances comparable to those of thin films of lower-k materials. Self-assembled monolayers (SAMs)...

To fully realize the advantages of organic flexible electronics, patterning is very important. In this paper we show that a purely additive patterning technique, termed polymer inking and stamping, can be used to pattern conductive polymer PEDOT and fabricate sub-micron channel length organic thin film transistors. In addition, we applied the technique to transfer a stack of metal/conjugated po...

The bias stress effect in pentacene organic thinfilm transistors has been investigated. The transistors utilize a thin gate dielectric based on an organic self-assembled monolayer and thus can be operated at low voltages. The bias stress-induced threshold voltage shift has been analyzed for different drain-source voltages. By fitting the timedependent threshold voltage shift to a stretched expo...

The organic thin-film transistor (OTFT) is now a mature device that has developed tremendously during the last twenty years. The aim of this paper is to update previous reviews on that matter that have been published in the past. The operating mode of OTFTs is analyzed in view of recent model development. This mainly concerns the distribution of charges in the conducting channel and problems co...