The calibration of a new submicrometer magnification standard for electron microscopes is described. The new standard is based on the width of a thin thermal-oxide film sandwiched between a silicon single-crystal substrate and a polysilicon capping layer. The calibration is based on an ellipsometric measurement of the oxide thickness before the polysilicon layer is deposited on the oxide. The u...

Epitaxial indium tin oxide films have been grown on both LaAlO3 and yttria-stabilized zirconia substrates using RF magnetron sputtering. Electrolyte gating causes a large change in the film resistance that occurs immediately after the gate voltage is applied, and shows no hysteresis during the charging/discharging processes. When two devices are patterned next to one another and the first one g...

Spectroscopic ellipsometry and atomic force microscope techniques were employed to analyze optical properties, microstructure and thickness of cobalt oxide thin films deposited on metal substrates by the sol-gel dipping method. The ellipsometric data were conveniently fitted, assuming a stratified structure for the deposited film, which consists of a sublayer native oxide that was coated with a...

We have used medium energy ion scattering to study oxygen transport and oxidation kinetics of Al(1 1 0) at elevated temperatures in dry oxygen. Oxidation results in the formation of a stable stoichiometric Al2O3 layer with fairly abrupt interfaces. The time dependence of the film growth follows inverse logarithmic law, in agreement with the Cabrera– Mott (field-assisted) oxidation mechanism. Th...

In the present work we have investigated the relationships existing between the optical properties and the growth mechanism, microstructure and surface roughness of SnO2 and ZnO oxide films prepared by magnetron sputtering under conditions resembling those utilized in industry. Thin films of these oxides with different thicknesses were characterized by atomic force microscopy, glancing incidenc...

The influence of processing parameters of aluminum oxide (Al2O3) and lanthanum oxide (La2O3) gate dielectric is investigated. Trimethylaluminum (TMA) and tris(isopropylcyclopentadienyl) lanthanum [La(iPrCp)3] were used as precursors separately, and H2O was used as oxidant. The ultra-thin La1 - x Al x O3 gate dielectric films are deposited on p-type silicon substrates by atom layer deposition (A...

While continuum descriptions of oxide film growth are well established, the local structural dynamics during oxide growth are largely unexplored. Here, we investigate this using scanning tunneling microscopy (STM) and X-ray photoelectron spectroscopy (XPS) for the example of alumina film growth on NiAl(110) following NO2 exposure. To maintain a well-defined system, we have adopted a cyclic grow...

We report a simple and mass-scalable approach for thin MoS2 films via RF sputtering combined with the post-deposition annealing process. We have prepared as-sputtered film using a MoS2 target in the sputtering system. The as-sputtered film was subjected to post-deposition annealing to improve crystalline quality at 700 °C in a sulfur and argon environment. The analysis confirmed the growth of c...

Correction for 'Ultrathin titanium oxide nanosheets film with memory bactericidal activity' by Gen Wang, et al., Nanoscale, 2016, DOI: 10.1039/c6nr06313f.