نتایج جستجو برای: photoluminescence
تعداد نتایج: 11123 فیلتر نتایج به سال:
We present results of a comparative study of colloidal anatase titanium oxide nanorods and extremely thin atomic wires of systematically decreasing (2.6 nm down to 0.5 nm) diameter in terms of their optical absorption as well as steady-state and time-resolved photoluminescence. Steady-state photoluminescence spectra of the titania samples show three well-distinguished spectral components, which...
The room-temperature photoluminescence of Cd1−xMxS (M=Ni, Fe) nanoparticles were investigated. Compared with the photoluminescence of CdS which peaks at 475 nm, the photoemission of CdS:Fe nanoparticles was peaking at 537 nm because of Fe acting as luminescent centers. On the other hand, the green emission (503 nm) of CdS:Ni attributed to the T2g(D)→ A2g(F) raditive transition. With the increas...
Detailed studies are reported on the photoluminescence of InAsSb/ InAs multiple quantum wells grown by molecular beam epitaxy on InAs substrates with the Sb mole fraction ranging from 0.06 to 0.13. From 4 K photoluminescence the band alignment was determined to be staggered type II. By comparing the emission peak energies with a transition energy calculation it was found that both the conductio...
In this paper, the enhanced photoluminescence from CdS thin film with SiO2 nanopillar array (NPA) was demonstrated. The CdS was prepared using chemical bath deposition in a solution bath containing CdSO4, SC(NH2)2, and NH4OH. The SiO2 NPA was fabricated by the nanosphere lithography (NSL) techniques. The nanopillar is about 50 nm in diameter, and the height is 150 nm. As a result, the sample wi...
Related Articles Spectral engineering of LaF3:Ce3+ nanoparticles: The role of Ce3+ in surface sites J. Appl. Phys. 111, 074315 (2012) Determination of the absolute internal quantum efficiency of photoluminescence in GaN co-doped with Si and Zn J. Appl. Phys. 111, 073106 (2012) Deep-level transient spectroscopy and photoluminescence measurements of dissociation energy of the 1.014-eV copper cent...
Spectrally resolved photoluminescence is used to measure the band-to-band absorption coefficient α(BB)(ℏω) of organic-inorganic hybrid perovskite methylammonium lead iodide (CH₃NH₃PbI₃) films from 675 to 1400 nm. Unlike other methods used to extract the absorption coefficient, photoluminescence is only affected by band-to-band absorption and is capable of detecting absorption events at very low...
8H-SiC epilayers grown on small 8H-SiC Lely platelets are investigated optically using photoluminescence spectroscopy. At low temperature the near band gap emission detected in the 2.78 to 2.67 eV range contains sharp lines associated to nitrogen-bound-exciton recombination. Three different no-phonon lines are detected accompanied by their phonon replicas. Free-exciton replicas are also observe...
Photoluminescence and positron annihilation spectroscopy have been used to characterize and identify vacancy-type defects produced in ZnO films grown on sapphire by metal-organic chemical-vapor deposition. The photoluminescence of the samples in the near band edge region has been studied, paying particular attention to the emission at 370.5 nm 3.346 eV . This emission has been correlated to the...
We studied the exciton energy transfer in pairs of semiconducting nanotubes using high-resolution optical microscopy and spectroscopy on the nanoscale. Photoluminescence from large band gap nanotubes within bundles is observed with spatially varying intensities due to distance-dependent internanotube transfer. The range of efficient energy transfer is found to be limited to a few nanometers bec...
In this study we investigate the carrier relaxation dynamics in p-type doped InGaAs/GaAs quantum dots using time-integrated and time-resolved photoluminescence. The experiment shows that while a strong phonon bottleneck is observed in the undoped samples, with a 680 ps rise time of the photoluminescence intensity, the intra-dot relaxation time (31 ps) of the p-type doped samples is reduced sign...
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