Let G be a planar graph with n vertices whose vertex set is partitioned into subsets V0, . . . , Vk−1 for a positive integer 1 ≤ k ≤ n and let S be a set of n distinct points in the plane partitioned into subsets S0, . . . , Sk−1 with |Vi| = |Si| (0 ≤ i ≤ k − 1). This paper studies the problem of computing a crossing-free drawing of G such that each vertex of Vi is mapped to a distinct point of...

Suppose that G = (1/G, EG) is a planar graph embedded in the euclidean plane, that I, J, K, 0 are four of its faces (called holes in G), that sl, , s,, t, , , t, are vertices of G such that each pair {si, ti} belongs to the boundary of some of I,J, K, 0, and that the graph (I/G, EGu{ {.slr fl}, ___ ,{.r,, t,}}) is eulerian. We prove that if the multi(commodity)flow problem in G with unit demand...

Silicon nanoribbons (Si NRs) with a thickness of about 30 nm and a width up to a few micrometers were synthesized. Systematic observations indicate that Si NRs evolve via the following sequences: the growth of basal nanowires assisted with a Pt catalyst by a vapor-liquid-solid (VLS) mechanism, followed by the formation of saw-like edges on the basal nanowires and the planar filling of those edg...

The images taken by the Heliospheric Imagers (HIs), part of the SECCHI imaging package onboard the pair of STEREO spacecraft, provide information on the radial and latitudinal evolution of the plasma compressed inside corotating interaction regions (CIRs). A plasma density wave imaged by the HI instrument onboard STEREO-B was found to propagate towards STEREO-A, enabling a comparison between si...

Knowledge of nanoscale heteroepitaxy is continually evolving as advances in material synthesis reveal new mechanisms that have not been theoretically predicted and are different than what is known about planar structures. In addition to a wide range of potential applications, core/shell nanowire structures offer a useful template to investigate heteroepitaxy at the atomistic scale. We show that...

Phthalocyanines, naphthalocyanins, and their derivatives are frequently used as light modulating materials. These compounds, with their stable planar square structure and highly delocalized π-electron system, are being used in numerous technological applications, such as pigments in chemical sensors, and more recently as photosensitizers for photodynamic therapy. The nonlinear optical propertie...

InGaAs MOSFETs have been considered promising candidate for post-Si logic devices beyond 14nm technology node. To meet the increasing demand in electrostatic control at sub-100nm channel lengths, non-planar 3D structures have been introduced to the fabrication of InGaAs MOSFETs. In this paper, the fabrication and characterization of various non-planar 3D InGaAs MOSFETs have been demonstrated an...

Heteroepitaxial self-assembled quantum dots (SAQDs) will allow breakthroughs in electronics and optoelectronics. SAQDs are a result of Stranski-Krastanow growth whereby a growing planar film becomes unstable after an initial wetting layer is formed. Common systems are GexSi1−x/Si and InxGa1−xAs/GaAs. For applications, SAQD arrays need to be ordered. The role of crystal anisotropy, random initia...

The interaction of a 2 MeV proton beam with an ultrathin unbent Si crystal was studied through simulation and experiment. Crystal thickness along the beam was set at 92 nm, i.e., at half the oscillation wavelength of the protons in the crystal under planar channeling condition. As the nominal beam direction is inclined by less than the critical angle for planar channeling with respect to the cr...