Magnetically enhanced inductively coupled plasma ~MEICP! and helicon sources for materials processing are of interest because of their ability to deposit power within the volume of the plasma beyond the classical skin depth. The location and manner of power deposition can vary substantially depending on the mode of operation and reactor conditions. The coupling of electromagnetic fields to the ...

A new method for the fabrication of nanocrystalline silicon (nc-Si) in SiH4 plasma with very-high-frequency (VHF; 144MHz) excitation is proposed to increase the deposition rate, to control the size, and to minimize size dispersion of nc-Si. Nanocrystalline silicon is formed in the gas phase of the SiH4 plasma cell by coalescence of radicals. Supplying Ar enhances the nucleation of nc-Si because...

We report on the electrode-selective deposition and etching of hydrogenated silicon thin films using a plasma enhanced chemical vapour deposition process excited by sawtooth-shaped tailored voltage waveforms (TVWs). The slope asymmetry of such waveforms leads to a different rate of sheath expansion and contraction at each electrode, and therefore different electron power absorption near each el...

Several silicon dioxide chemical vapor deposition processes using high density plasma sources have been recently proposed in the literature [4,6] for deposition of self-planarizing inter-level dielectric deposition. All these processes exhibit the competitive effect of simultaneous deposition and etching mechanisms. In previous papers [1,2,3], a level set approach was developed for etching and ...

I present a novel view on the problem of solar coronal heating. In my picture, coronal heating should be viewed as a self-regulating process that works to keep the coronal plasma marginally collisionless. The self-regulating mechanism is based on the interplay between two effects: (1) Plasma density controls coronal energy release via the transition between the slow collisional Sweet-Parker reg...

From Plasma Immersion Ion Implantation to Deposition: A Historical Perspective on Principles and Trends André Anders Lawrence Berkeley National Laboratory, University of California, Berkeley, California 94720, USA Abstract Plasma immersion techniques of surface modification are known under a myriad of names. The family of techniques reaches from pure plasma ion implantation, to ion implantation...

To control deposition profile of carbon films in trenches, we have studied substrate temperature and aspect ratio dependence of deposition rate of carbon films, deposited by CVD plasma of toluene diluted H2, in trenches. The deposition rates increases with decreasing the aspect ratio, because the incident radical flux per surface area in a trench increases with decreasing the aspect ratio. The ...