Strain in B-implanted laser thermal processed sLTPd silicon is reduced by coimplantation of In. Strain in the codoped layer is calculated using lattice constants measured by high-resolution x-ray diffraction. Compensation of the strain with increasing In dose corresponds to suppression of the carrier deactivation during post-LTP annealing. © 2005 American Institute of Physics. fDOI: 10.1063/1.1...

Bimetallic islands films consisting of composite Au-Ag nanoparticles are deposited on glass substrates by electron beam evaporation. Broad tuning of the surface plasmon resonance (SPR) characteristics can be achieved by controlling film composition, deposition temperature and post-deposition thermal annealing. Optical and structural characterization of the samples enable to establish the link b...

Molybdenum thin films with 50 and 150 nm thicknesses were deposited on silicon substrates, using DC magnetron sputtering system, then post-annealed at different temperatures (200, 325, 450, 575 and 700°C) with flow oxygen at 200 sccm (standard Cubic centimeter per minute). The crystallographic structure of the films was obtained by means of x-ray diffraction (XRD) analysis. An atomic force micr...

Duplex stainless steels (DSSS) have a microstructure composed of ferrite and austenite phases that gives them a very good combination of mechanical and corrosion properties. These steels are desirable for many applications in the chemical and petrochemical industries. In the present study, a type of stainless steel was cast, solution annealed at 1200°C for 60 min and then quenched in water. Ini...

ZnO thin films with preferred orientation along the (002) plane were prepared onto the glass substrates by the sol-gel spin coating method for different post- annealing temperatures. The XRD study confirms that the thin films grown by this method have good crystalline hexagonal wurtzite structure. The optical band gap of the samples was determined from UV-visible spectra. It is found that the s...

Abstract We demonstrate the advantage of post-implantation annealing (PIA) in NH 3 /N 2 for a p-n diode (PND) fabricated by implantation Mg and N ions into an n-type GaN layer comparison with that annealed . The leakage current PND reverse bias was lower case annealing. cathodoluminescence spectrum measured indicated reduction densities non-radiative recombination centers nitrogen vacancy compl...

This contribution highlights correlation between the surface concentration of a chemisorbed organophosphorous probe (flavin mononucleotide) and the relative hydroxyl surface coverage of nanostructured ITO electrodes, which can be tuned during post-deposition reductive annealing. The resulting modified electrodes are very stable in aqueous solution, highly hydrophilic and fully-accessible to the...

PbS quantum dot-sensitized solar cells (QDSCs) with a photovoltaic conversion efficiency (η) of 5.73% have been fabricated by applying Au/CuS/FTO as a counter electrode (CE), post-annealing the deposited PbS QDs, and introducing the bilayered TiO2 nanostructure as a photoanode.