We designed an emission control driver using P-type TFTs to adjust the light emission period of an active matrix organic light emitting diode (AMOLED) displays. The P-TFT emission control driver has achieved rail-to-rail driving and low power consumption. Using this circuit, we can control peak brightness dynamically to reduce panel power consumption and motion blur. We developed 4.3 inch WQVGA...

Power devices are increasingly important and more complex, often using wide bandgap materials such as Silicon Carbide (SiC) and Gallium Nitride (GaN). The need for high voltage, high power, and fast switching devices operating in harsh environments require accurate design and performance optimization for both device and circuit operation. The best solution is complete integration from process f...

Progress of integrated circuit technology allows integration of analog and digital circuits on the same chip. This co-integration yields higher performances and reliability, while reducing power consumption, but also raises new challenges for circuit designers. The substrate noise generated by the switching digital part has detrimental effects on the analog part. In this contribution, a wide-ba...

For a number of years, NIST has been developing a Josephson arbitrary waveform synthesizer as an ac Josephson Voltage Standard (ACJVS). The effort has primarily focused on increasing the output voltage to practical levels. Recent advances in circuit design and superconducting integrated circuit fabrication have enabled us for the first time to demonstrate waveforms with a 242 mV peak voltage. T...

Abstract: Class-F microwave monolithic integrated circuit (MMIC) power amplifiers (PA) fabricated in a GaN technology are reported. Field-plated GaN HEMT devices are used for highpower performance. Two MMICs are reported. The first class-F MMIC PA operating at 2.0GHz achieved a power-added efficiency (PAE) of 50% with 38dBm output power and 6.2W/mm power density. A second class-F PA operating a...

In this paper, a new circuit scheme is proposed to reduce the power consumption of dynamic circuits. In the proposed circuit, an NMOS keeper transistor is used to maintain the voltage level in the output node against charge sharing, leakage current and noise sources. Using the proposed keeper scheme, the voltage swing on the dynamic node is lowered to reduce the power consumption of wide fan-in...

According to the Moore’s Law, the number of transistors in a unit chip area double every two years. But the existing technology of integrated circuit formation is posing limitations to this law. CMOS technology shows certain limitations as the device is reduced more and more in the nanometer regime out of which power dissipation is an important issue. FinFET is evolving to be a promising techno...

Process Variation has become a crucial challenge on both interconnect delay and reliability of nanometer integrated circuit designs. Furthermore, the dramatic increase of power consumption and integration density has led to high operating temperature. Temperature, as well as electromigration (EM) and power, also significantly affects the delay and reliability of interconnects. Considering proce...

This paper presents a new circuit arrangement for a current-mode Wheatstone bridge that is suitable for low-voltage integrated circuits implementation. Compared to the other proposed circuits, this circuit features severe reduction of the elements number, low supply voltage (1V) and low power consumption (<350uW). In addition, the circuit has favorable nonlinearity error (<0.35%), operate with ...