We demonstrate epitaxially grown semiconductor membrane quantum well lasers on a SiO 2 /Si substrate lasing in waveguide configuration, for potential uses as coherent light sources compatible with photonic integrated circuits. study the emission characteristics of In 0.13 Ga 0.87 As/GaAs 0.94 P 0.06 lasers, by using real and reciprocal space imaging. The laser cavity length is 424 μm, it emits ...

We study a multilayer silicon-germanium quantum well structure doped with acceptor impurities for resonant-state lasers capable of emitting photons of energy below 4 meV 1 THz . Unlike previous proposals on terahertz lasers in doped silicon-germanium quantum wells, the emitted photon energy does not need to exceed the acceptor binding energy, which is tens of meV. The energy constraint is relax...

Metal-clad subwavelength lasers have recently become excellent candidates for light sources in densely packed chip-scale photonic circuits. In this review, we summarize recent research efforts in the theory, design, fabrication, and characterization of such lasers. We detail advancements of both the metallodielectric and the coaxial type lasers: for the metallo-dielectric type, we discuss opera...

Most vapor molecules have a unique absorption spectrum in the mid-IR region, so this range is of particular interest for trace gas analysis and chemical sensing. And quantum cascade (QC) lasers are ideal candidate light sources for mid-IR spectroscopy: Their emission wavelength reaches from the midto the far-IR with good power efficiency. QC lasers are based on the intersubband transitions betw...