In this paper, a circuit design method for electrostatic discharge (ESD) protection is presented. It considers the gate floating state for ESD protection and negatively gate biased for leakage suppression under normal operations. The circuit is achieved by adding a switch device and a negatively biased circuit at the gate of ESD protection devices. Robustness and leakage of ESD protection circu...

Abstract Two-dimensional transition metal dichalcogenide materials (TMDs), such as molybdenum disulfide (MoS 2 ), have been considered promising candidates for future electronic applications owing to their electrical, mechanical, and optical properties. Here, we present a new concept multifunctional MoS flash memory by combining channel with PEDOT:PSS floating layer. The proposed devices exhibi...