A microscopic model of the resistive switching mechanism in bipolar metal-oxide based resistive random access memory (RRAM) is presented. The distribution of electron occupation probabilities obtained is in agreement with previous work. In particular, a low occupation region is formed near the cathode. A hysteresis cycle of RRAM switching simulated with the model including the ion dynamics is i...

The advances in network technology and the growth of the Internet together with upcoming new applications like peer-to-peer (P2P) networks have led to an exponential growth of the stored data volume. The key to manage this data explosion seems to be the consolidation of storage systems inside storage area networks (SANs) and the use of a storage virtualization solution that is able to abstract ...

In this study we derive a stuctural econometric model of learning by doing with multiproduct competition from a dynamic oligopoly game. We show the importance to account for multiproduction effects through product differentiation when measuring learning by doing. Using quarterly firm-level data for the dynamic random access memory semiconductor industry, we provide evidence that accounting for ...

considerations for MRAM T. M. Maffitt J. K. DeBrosse J. A. Gabric E. T. Gow M. C. Lamorey J. S. Parenteau D. R. Willmott M. A. Wood W. J. Gallagher MRAM (magnetic random access memory) technology, based on the use of magnetic tunnel junctions (MTJs) as memory elements, is a potentially fast nonvolatile memory technology with very high write endurance. This paper is an overview of MRAM design co...

This paper introduces the queue-read queue-write (qrqw) parallel random access machine (pram) model, which permits concurrent reading and writing to shared-memory locations, but at a cost proportional to the number of readers/writers to any one memory location in a given step. Prior to this work there were no formal complexity models that accounted for the contention to memory locations, despit...

This research focuses on the diffusion patterns of the adjacent generations of technology and its relation to the time that elapses between them (intergeneration time). The authors analyze 45 new technologies in 15 industries and find that the adoption curves systematically vary across generations from 2 years for dynamic random-access memory (DRAM) chips to more than 30 years for steelmaking. ...

This paper reviews the remarkable developments of the magnetic tunnel junction over the last decade and in particular, work aimed at demonstrating its potential for a dense, fast, and nonvolatile random access memory. The initial focus is on the technological roots of the magnetic tunnel junction, and then on the recent progress made with engineered materials for this device. Following that, we...

The notion of garbled random-access machines (garbled RAMs) was introduced by Lu and Ostrovsky (Eurocrypt 2013). It can be seen as an analogue of Yao’s garbled circuits, that allows a user to garble a RAM program directly, without performing the expensive step of converting it into a circuit. In particular, the size of the garbled program and the time it takes to create and evaluate it are only...

We consider the problem of merging two sorted arrays and on an exclusive read, exclusive write parallel random access machine (EREW PRAM, see [8] for a definition). Our approach consists of identifying elements in and which would have appropriate rank in the merged array. These elements partition the arrays and into equal-size subproblems which then can be assigned to each processor for sequent...