In this paper, we, for the first time, present the effects of the thermal annealing of the W/SiO 2 multi-layer Bragg reflectors on the resonance characteristics of the ZnO-based film bulk acoustic wave resonator (FBAR) devices. In order to improve the resonance characteristics of the FBAR devices, we employed a thermal annealing process after the Bragg reflectors were formed on a silicon substr...

High uniformity Au-catalyzed indium selenide (In2Se3) nanowires are grown with the rapid thermal annealing (RTA) treatment via the vapor-liquid-solid (VLS) mechanism. The diameters of Au-catalyzed In2Se3 nanowires could be controlled with varied thicknesses of Au films, and the uniformity of nanowires is improved via a fast pre-annealing rate, 100 °C/s. Comparing with the slower heating rate, 0...

Electrospun polymer fibers are gaining importance because of their unique properties and applications in areas such as drug delivery, catalysis, or tissue engineering. Most studies to control the morphology and properties of electrospun polymer fibers focus on changing the electrospinning conditions. The effects of post-treatment processes on the morphology and properties of electrospun polymer...

This paper describes a simple and accurate model for boron diffusion in SiGe that was successfully implemented in TAURUS (PMEI). The comparison of the Si,.,Ge, samples to the Si samples after rapid thermal and furnace annealing revealed a retarded B diffusion inside the strained Sil.,Ge, layers. The influence of the Ge content on the dopant diffusion was also measured and simulated, demonstrati...

In this study, we report a novel strategy to prepare graphene nanopapers from direct vacuum filtration. Instead of the conventional method, i.e., thermal annealing nanopapers at extremely high temperatures prepared from graphene oxide (GO) or partially reduced GO, we fabricate our graphene nanopapers directly from suspensions of fully reduced graphene oxide (RGO), obtained after RGO and thermal...

The Schottky junction source/drain structure has great potential to replace the traditional p/n junction source/drain structure of the future ultra-scaled metal-oxide-semiconductor field effect transistors (MOSFETs), as it can form ultimately shallow junctions. However, the effective Schottky barrier height (SBH) of the Schottky junction needs to be tuned to be lower than 100 meV in order to ob...