Electronic bipolar resistive switching and its degradation in the Pt/TiO2/Pt structure were studied. The electronic bipolar switching was induced from the asymmetric trap distribution of the structure under its unipolar reset state. The imbalanced migration of oxygen accompanied by electronic switching significantly degrades switching endurance. Instead, the anti-serial connection of Pt/TiO2/Pt...

This paper presents in detail the entire procedure in calculating the bias resistance of an ohmic RFMEMS switch, controlled under resistive damping. (Charge drive technique). In case of a very stiff device, like the North Eastern University (NEU) switch, the actuation control under resistive damping is the only way to achieve controllability. Due to the short switching time as well as the high ...

Nonlinear systems, such as switching DC-DC boost or buck converters, have rich dynamics. A simple one-dimensional discrete-time model is used to analyze the boost or buck converter in discontinuous conduction mode. Seven different control schemes (open-loop power stage, voltage mode control, current mode control, constant power load, constant current load, constanton-time control, and boundary ...

A study on the bipolar-resistive switching of an Ni/SiN/Si-based resistive random-access memory (RRAM) device shows that the influences of the reset power and the resistance value of the low-resistance state (LRS) on the reset-switching transitions are strong. For a low LRS with a large conducting path, the sharp reset switching, which requires a high reset power (>7 mW), was observed, whereas ...

Abstract Resistive-memory devices promise to revolutionize modern computer architecture eliminating the data-shuttling bottleneck between memory and processing unit. Recent years have seen a surge of experimental demonstrations such built upon two-dimensional materials based metal–insulator–metal structures. However, fundamental mechanism nonvolatile resistive switching has remained elusive. He...