نتایج جستجو برای: resistivity

تعداد نتایج: 11971  

Journal: :IEEE Trans. Instrumentation and Measurement 1998
Tuqiang Xie Swee Chuan Tjin Qingping Yang Seng Lee Ng

Blood resistivity is an important quantity whose value influences the results of various methods used in the study of heart and circulation. In this paper, the relationship between blood resistivity and velocity of blood flow was evaluated and analyzed based upon a probe using six-ring electrodes and a circulatory model. The experimental results indicated that the change in blood resistivity wa...

2003
V. Ferrando P. Manfrinetti D. Marré M. Putti C. Tarantini C. Bernini C. Ferdeghini

Critical fields of four MgB 2 thin films with a normal state resistivity ranging from 5 to 50 µΩcm and T c from 29.5 to 38.8 K were measured up to 28 T. H c2 (T) curves present a linear behavior towards low temperatures. Very high critical field values have been found, up to 24 T along the c-axis and 57 T in the basal plane not depending on the normal state resistivity values. In this paper, cr...

2008
Baruch Feldman Rui Deng Scott T. Dunham

We extend quantum models of nanowire surface scattering to incorporate bulk resistivity and extract an expression for the increased resistivity due to surface roughness. To learn how to improve conductivity, we calculate conductivity degradation from individual wavelengths of surface roughness, and show how these can be convolved to give resistivity for arbitrary surfaces. We review measurement...

2008
M. K. Chattopadhyay Meghmalhar Manekar Kanwal Jeet Singh Sujeet Chaudhary S. B. Roy

Resistivity and thermoelectric power (TEP) measurements on CeFe2 and two of its pseudo-binaries Ce(Fe, 5% Ir)2 and Ce(Fe, 7% Ru)2 between 78K and 275K are reported. The resistivity data are analysed in terms of contributions from scattering due to phonon, magnon, spin fluctuation and lattice defects, and also from interband scattering. Attempts are made to analyze the TEP data in terms of these...

2017
Shixiong Yuan Haimin Guo Yu Ding Rui Deng

According to core data, this paper studies variation of resistivity in different pore structures and wettability conditions. The results show that with the increase of pore structure index m, the resistivity will increase significantly when the saturation is constant. Similarly, with increasing saturation index n, the resistivity will also increase even with the same saturation. With fixed m an...

1999
Peter M. Levy

The electrical resistivity of a pure sample of a thin metallic film is found to depend on the boundary conditions. This conclusion is supported by a freeelectron model calculation and confirmed by an ab initio relativistic KorringaKohn-Rostoker computation. The low-temperature resistivity is found to be zero for a free-standing film (reflecting boundary conditions) but nonzero when the film is ...

2010
Kiyohisa FUJINAGA

30 Si(n,ƒÁ)31Si2.62h +31P+ƒÀ(1) Irradiated silicon crystals are heavily damaged and electrical resistivity changes drastically. The lattice damage can be removed by an appropriate annealing. The change in resistivity of the silicon crystals is quite complex. It depends on both impurity atoms contained originally in silicon and atoms produced by nuclear reactions. This note describes the determi...

2005
H. Kuwahara

The Hall resistivity and magnetization have been investigated in the ferromagnetic state of the bilayered manganite La2−2xSr1+2xMn2O7 (x=0.36). The Hall resistivity shows an increase in both the ordinary and anomalous Hall coefficients at low temperatures below 50K, a region in which experimental evidence for the spin glass state has been found in a low magnetic field of 1mT. The origin of the ...

Journal: :Physical review. B, Condensed matter 1993
Rathnayaka Hennings Naugle

The resistivity of codeposited amorphous Til „Al films has been measured from 1.5 to 300 K over the composition range 0.4~x ~0.92, and the Hall coefficient has been measured at 4 K. The resistivity exhibits a relatively small temperature dependence. The magnitude of the room-temperature resistivity varies appreciably with composition, with a broad maximum around 250 pQ cm near x =0.5. The Hall ...

Journal: :Physical review letters 2006
John Cumings L S Moore H T Chou K C Ku G Xiang S A Crooker N Samarth D Goldhaber-Gordon

We measure the low-field Hall resistivity of a magnetically doped two-dimensional electron gas as a function of temperature and electrically gated carrier density. Comparing these results with the carrier density extracted from Shubnikov-de Haas oscillations reveals an excess Hall resistivity that increases with decreasing temperature. This excess Hall resistivity qualitatively tracks the param...

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