نتایج جستجو برای: reverse saturation current

تعداد نتایج: 922903  

2016
Lei Xing Shangfeng Du Rui Chen Mohamed Mamlouk Keith Scott

A two-dimensional along-the-channel CFD (computational fluid dynamic) model, coupled with a twophase flow model of liquid water and gas transport for a PEM (proton exchange membrane) fuel cell is described. The model considers non-isothermal operation and thus the non-uniform temperature distribution in the cell structure. Water phase-transfer between the vapour, liquid water and dissolved phas...

2017
Kibruyesfa Bayou

Reverse genetics is a gene-driven approach that deduces, from directed mutations, the full range of phenotypes controlled by each gene. This investigative process proceeds in the opposite direction of so-called forward genetic screens of classical genetics. Genome sequencing projects have identified large numbers of organisms’ genes for which no role has yet been defined. To address this proble...

Journal: :international journal of nano dimension 0
rh. saikia department of electronics & communication technology, gauhati university, guwahati-781014, india. p.k. kalita department of physics, guwahati college, guwahati-781021, india. p. datta department of electronics & communication technology, gauhati university, guwahati-781014, india. k. k. chattopadhyay department of physics, jadavpur university, jadavpur-700032, india.

cdse nanostructures were synthesized by using green chemical route as starch was used as capping agent. xrd, hr-tem, sead, uv and pl studies were made for structural and optical properties of the prepared sample. film morphology and the thickness measurement of n-cdse were carried out with afm analysis. i-v characteristics curve of this junction confirmed the formation of schottky contact betwe...

2015
Benedikt Ifland Patrick Peretzki Birte Kressdorf Philipp Saring Andreas Kelling Michael Seibt Christian Jooss

After a general introduction into the Shockley theory of current voltage (J-V) characteristics of inorganic and organic semiconductor junctions of different bandwidth, we apply the Shockley theory-based, one diode model to a new type of perovskite junctions with polaronic charge carriers. In particular, we studied manganite-titanate p-n heterojunctions made of n-doped SrTi1- y Nb y O3, y = 0.00...

2013
Volodymyr P. Kravchuk Oleksii M. Volkov Denis D. Sheka Yuri Gaididei

The magnetization behavior of long nanowires with square cross section under the influence of strong perpendicular spin-polarized current is studied theoretically. The study is based on Landau-Lifshitz-Slonczewski phenomenology. Without the current the wire is magnetized uniformly along its axis. For small currents the wire magnetization remains uniform, but it inclines with respect to the wire...

2017
Wen-Jeng Ho Jian-Cheng Lin Jheng-Jie Liu Wen-Bin Bai Hung-Pin Shiao

This study characterized the electrical and optical properties of single-junction GaAs solar cells coated with antireflective layers of silicon dioxide (SiO₂), indium tin oxide (ITO), and a hybrid layer of SiO₂/ITO applied using Radio frequency (RF) sputtering. The conductivity and transparency of the ITO film were characterized prior to application on GaAs cells. Reverse saturation-current and...

2010
J. Cho A. Mao J. K. Kim J. K. Son Y. Park E. F. Schubert

The characteristics of the reverse leakage current of GaInN/GaN multiple quantum well light-emitting diodes (LEDs) are examined with various n-type GaN doping concentrations and interpreted by using a tunnelling current model. Changing the doping concentration of the n-type GaN influences the tunnelling probability of electrons into the conduction band and thus the reverse leakage current. Redu...

Journal: :Microelectronics Reliability 2013
K. S. Kim H. J. Kim P. H. Choi H. S. Park I. H. Joo J. E. Song D. H. Song B. D. Choi

Components of drain leakage currents in the off-state of MOSFET are gate-induced drain-leakage (GIDL) and drain junction reverse currents. Device degradation phenomenon and mechanism by GIDL have been well known, but those by drain junction reverse current (IDJR). have not. In this paper, device degradation mechanisms by drain junction reverse current in the off-state were studied through I-V c...

2000
Carl James Debono Franco Maloberti Joseph Micallef

A low-voltage analog multiplier operating at 1.2V is presented. The multiplier core consists of four MOS transistors operating in the saturation region. The circuit exploits the quadratic relation between current and voltage of the MOS transistor in saturation. The circuit was designed using standard 0.6μm CMOS technology. Simulation results indicate an IP3 of 4.9dBm and a spur free dynamic ran...

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