Efficient Transmitters for Wireless Communications in Nanoscale CMOS Technology by Debopriyo Chowdhury Doctor of Philosophy in Engineering Electrical Engineering and Computer Sciences University of California, Berkeley Professor Ali M. Niknejad, Chair The last decade has witnessed a tremendous growth in wireless communications. Todays consumers demand wireless systems that are low-cost, power e...

Process design, development and integration to fabricate reliable MEMS devices on top of VLSI-CMOS electronics without damaging the underlying circuitry have been investigated throughout this dissertation. Experimental and theoretical results that utilize two " Post-CMOS " integration approaches will be presented. The first integration approach uses SiGe MEMS technology for the " Post-CMOS " mo...

The DARPA Diverse Accessible Heterogeneous Integration (DAHI) program is developing transistor-scale heterogeneous integration processes to intimately combine advanced compound semiconductor (CS) devices, as well as other emerging materials and devices, with high-density silicon CMOS technology. This technology is currently enabling RF/mixed signal circuits with revolutionary performance. For e...

The fabrication and characterization of a radio frequency (RF) micromachined switch with annealing were presented. The structure of the RF switch consists of a membrane, coplanar waveguide (CPW) lines, and eight springs. The RF switch is manufactured using the complementary metal oxide semiconductor (CMOS) process. The switch requires a post-process to release the membrane and springs. The post...

This paper presents a fully integrated wake-up receiver (WuRx) with direct active RF detection. The RF front-end features a high-sensitivity RF detector embedded with input matching network, obviating the need of RF amplification and LO generation for frequency downconversion. This complete receiver contains an RF detector, IF amplifiers, and a continuous-time ΣΔ ADC to provide inherent anti-al...

In this paper, high-frequency (HF) AC and noise modeling of MOSFETs for radio frequency (RF) integrated circuit (IC) design is discussed. A subcircuit RF model incorporating the HF effects of parasitics is presented. This model is compared with the measured data for both parameter and characteristics. Good model accuracy is achieved against measurements for a 0.25 m RF CMOS technology. The HF n...

The capabilities of Horizontal Current Bipolar Transistor (HCBT) technology for radio frequency (RF) integrated circuit (IC) design is analyzed. The HBCT, with its novel technological approach and integration with existing CMOS technologies, is entering the testing phase on IC level. The demanding RF integrated circuit requirements and design issues in the frequency range 0.9 – 5 GHz are presen...