Tungsten oxide (WOx) thin film, which is well known as an electrochromic display, was deposited on the ITO film coated flexible substrates using the RF magnetron sputtering method. Phenomena of processing plasmas, the film quality and the electrochromic properties of deposited WO3 thin film have been studied as parameters of a gas pressure and gas mixture. Experimental results suggest that depo...

Results on the characterization of the elecmcal properties of amorphous silicon-films for the three different growth methods, RF sputtering, PECVD, and LPCVD are reported. The performance of these a-Si films as heterojunctions on high resistivity p-type and n-type crystalline silicon is examined by measuring the noise, leakage current and the alpha particle response of 5 mm diameter detector st...

Samarium (Sm) doped aluminum nitride (AlN) thin films are deposited on silicon (100) substrates at 77 K by rf magnetron sputtering method. Thick films of 200 nm are grown at 100-200 watts RF power and 5-8 m Torr nitrogen, using a metal target of Al with Sm. X-ray diffraction results show that films are amorphous. Cathodoluminescence (CL) studies are performed and four peaks are observed in Sm a...

The role of sandwich Cu layer in and effect of self-bias on structural and nanomechanical properties of Cu/DLC bilayer films have been explored. Cu/DLC bilayer filmswere grown, under varied self-bias from−125 to−225V, using hybrid system involving radiofrequency(RF-) plasma-enhanced chemical vapor deposition and RF-sputtering units. Surface topography and mean roughness was studied by atomic fo...

Solar cell fabrication on flexible thin plastic sheets needs deposition of transparent conducting anode layers at low temperatures. ITO thin films are deposited on glass by RF sputtering at substrate temperature of 70◦C and compare their phase, morphology, optical, and electrical properties with commercial ITO. The films contain smaller nanocrystallites in (222) preferred orientation and exhibi...

In the present work, the stress evaluation of RF sputtered silicon dioxide films for MEMS applications has been reported. The films were deposited in argon atmosphere in the pressure range 5-20 mtorr at 300 W RF power using a 3 inch diameter silicon dioxide target. The stress measurements were carried out using wafer curvature technique. All the deposited films show compressive stress except th...

Pt/α-Fe2O3 nanocomposites were synthesized on fluorine-doped tin oxide (FTO) substrates by a sequential plasma enhanced-chemical vapor deposition (PE-CVD)/radio frequency (RF) sputtering approach, tailoring the overall Pt content as a function of sputtering time. The chemico-physical properties of the as-prepared systems were extensively investigated by means of complementary techniques, includ...

This paper is a review on the status of hard coating of various physical vapour deposition (PVD) techniques and compare their properties. The use of hard and wear resistant PVD coatings on cutting tools is now widespread in global manufacturing for reducing production cost and improving productivity, all of which are essential if industry is to remain economically competitive. The review includ...