The aim of this paper is to show that Castelnuovo theory in projective space (cf. [ACGH] Ch.III §2 and [GH] Ch.4 §3) has a precise analogue for abelian varieties. This can be quite surprisingly related in a concrete way to the geometric Schottky problem, namely the problem of identifying Jacobians among all principally polarized abelian varieties (ppav’s) via geometric conditions on the polariz...

The electrical properties and thermal stability of ZrB2 Schottky contacts deposited on n-type GaN have been studied. As-deposited contacts had a barrier height of 0.80 eV, which decreased to 0.7 eV after annealing at 300 °C, and to 0.6 eV after additional annealing at 400 °C in nitrogen for 20 min. However, the barrier height remained at about 0.6 eV even when the diodes were annealed at 600 °C...

Abstract. It is well known that MIM (metal-insulator-metal) structures exhibit various high-field processes, which may be either electrode-limited (e.g. tunneling, Schottky-barrier emission) or bulk-limited (e.g. space-charge-limited conduction, Poole-Frenkel conduction). Thin films prepared using PECVD (plasma-enhanced chemical vapour deposition)exhibited Pool-Frenkel conductivity (Schottky co...

2014 The Schottky magnetodiode is the combination of two basic phenomena : the magnetodiode effect in double-injecting P+ NN+ structures and the effect of the carrier density modulation on the Schottky reverse current. Our devices, realized in SOS technology, denote magnetosensitivities of about 10 V/T. We investigate the influence of the geometrical parameters, injection rate and doping level ...

Presented in this paper are the characteristics of the first Trench MOS Schottky Diode released to manufacturing by International Rectifier. The optimized Silicon structure enables 15% VF reduction and a factor 4 of leakage suppression compared to a benchmark conventional planar device of the same voltage class. After reviewing the key features of Silicon design, the results of an in-circuit te...

We describe the design, fabrication, and characterization of superconducting 1n0.47 GaO.53 As junction field-eftect transistors (JFETs) with Nb source and drain electrodes. In0.47 GaO.5 , As has the advantage of combining large coherence length and high Schottky barrier transmission. making it a very attractive material on which to base superconducting FETs. At large voltages these devices beha...

We construct spectral triples associated to Schottky–Mumford curves, in such a way that the local Euler factor can be recovered from the zeta functions of such spectral triples. We propose a way of extending this construction to the case where the curve is not k-split degenerate.

We generalize results about the classical Schottky groups to quasiconvex subgroups in negatively curved groups, answering a question of M. Bestvina.

There are certain sequences of words in the generators of a twogenerator subgroup of SL(2,C) that frequently arise in the Teichmüller theory of hyperbolic three-manifolds and Kleinian groups. In this paper we establish the connection between two such families, the family of Farey words that have been used by Keen-Series to understand the boundaries of the Quasifuchsian space of surfaces of type...