4H-SiC (silicon carbide) is widely used in semiconductor devices due to its superior characteristics. However, processing techniques such as cutting, grinding, and polishing generally have problems low efficiency, high cost, difficulties guaranteeing quality, serious material waste. The in-depth research on the mechanical behavior, removal, damage mechanism of SiC single crystals at micro/nano ...

The aim of this paper is to compute some bounds of forgotten index and then we present spectral properties of this index. In continuing, we define a new version of energy namely ISI energy corresponded to the ISI index and then we determine some bounds for it.

The effect of the continuous electron beam scanning (CEBS) post-treatment on microstructure, mechanical properties and scratching behavior Ti-6Al-4V alloy samples produced by additive manufacturing was studied experimentally using molecular dynamics simulation. It found that CEBS resulted in transformation microstructure from α′-martensite into α+β structure. evolution sample shown to provide i...

The excellent Comment by Ulrike Munderloh and Timothy Kurtti (Sept 17, p 962)1 describes the complex life cycle of Borrelia burgdorferi, the spirochaetal agent of Lyme disease, as it traffics between tick and mammalian hosts. The Comment highlights a growing problem with Lyme disease: while what is known about the basic science of this tick-borne illness becomes more complex, the clinical scien...