The development and optimization of Silicon technology has been guided by CMOS scaling theory [1] and predications made by Semiconductor Industry (SIA) in the International Technology Roadmap for Semiconductor (ITRS). With the trend of scaling down of Complementary Metal Oxide Semiconductor (CMOS) transistor as Moore’s Law [2] requires replacement of conventional silicon dioxide layer with the ...

For semiconductor technologies, achievement of their ultimate potential depends greatly upon the ability to fully harness and exploit their advanced properties, which in turn depends on understanding these properties and their limiters. As such, the detailed characterization and analysis of advanced semiconductor materials and structures is paramount for the elucidation of these fundamental str...

in this paper, based on the coupled-mode and carrier rate equations, a dynamic model and numerical analysis of a multi quantum well (mqw) chirped distributed feedback semiconductor optical amplifier (dfb-soa)  all-optical flip-flop is precisely derived. we have analyzed the effects of strains of qw and mqw and cross phase modulation (xpm) on the dynamic response, and rise and fall times of the ...

Semiconductor strain engineering has become a critical feature of high-performance electronics because of the significant device performance enhancements that it enables. These improvements, which emerge from strain-induced modifications to the electronic band structure, necessitate new ultra-sensitive tools to probe the strain in semiconductors. Here, we demonstrate that minute amounts of stra...