ZnO is a wide band gap, naturally n-type semiconductor with great promise for optoelectronic applications; the main obstacle yet to be overcome is p-type doping. Nitrogen, the most promising candidate currently being pursued as a dopant, has been predicted to preferentially incorporate into the ZnO lattice in the form of a N-2 molecule at an O site when a plasma source is used, leading to compe...

Chemical doping in p-conjugated organic semiconductors, which involves a redox reaction between a host p-conjugated material and a dopant, is achieved by either co-evaporation, co-dissolved solution, or exposure to a dopant gas. Here, we demonstrate a new route for molecular doping; a thiophene-based semiconducting polymer film can be doped with dopants dispersed in an orthogonal solvent. An in...

Dissertation to obtain the doctor's degree at the university of Twente, under the authority of the rector magnificus, prof. dr. H. Brinksma, on account of the decision of the graduation committee,

The Coulomb interaction between electrons of opposite spin orientations in a metal or in a doped semiconductor results in a negative off-diagonal component of the electrical resistivity matrix—the so-called “spindrag resistivity.” It is generally quite difficult to separate the spin-drag contribution from more conventional mechanisms of resistivity. In this paper I discuss two methods to accomp...

0167-9317/$ see front matter 2011 Elsevier B.V. A doi:10.1016/j.mee.2011.04.022 ⇑ Corresponding author. E-mail address: [email protected] (E. Jerby). The feasibility of local doping in silicon by an open-end coaxial applicator with a tip made of the doping material, e.g. aluminum or silver, is studied in this paper. In these experiments, localized microwave power of 100–350 W at 2.45 GHz was ...

due to many important applications, the group iii-nitride semiconductors have recently attractedremarkable attention among semiconductor researchers and engineers. in this paper, we report on the impact of extrinsic and temporal carriers on the screening of polarization internal fields. the optical efficiency of gan/algan multiple quantum well (mqw) nanostructures were studied by means of photo...

We introduce a new class of spin-on dopants composed of organic, dopant-containing polymers. These new dopants offer a hybrid between conventional inorganic spin-on dopants and a recently developed organic monolayer doping technique that affords unprecedented control and uniformity of doping profiles. We demonstrate the ability of polymer film doping to achieve both p-type and n-type silicon by...

We performed a neutron-scattering experiment to investigate the effect of distortion of CuO2 planes on the low-energy spin correlation of La1.94−xSrxCe0.06CuO4 (LSCCO). Due to the carrier-compensation effect by co-doping of Sr and Ce, LSCCO has a smaller orthorhombic lattice distortion compared to La2−xSrxCuO4 (LSCO) with comparable hole concentration p. A clear gap with the edge-energy of 6∼7 ...