We herein developed a simple method to process a silicon nanowire field-effect transistor (SiNW-FET) sensor by using HNA to define the nanowire and top-down fabrication method. Problems caused by the dry and TMAH etchings were effectively avoided, and the surface to volume ratio of the nanowire was increased by the HNA etching at the same time. After SiNWs were covalently modified with DNA prob...

Title of dissertation: CHARACTERIZATION OF METAL-OXIDE-SEMICONDUCTOR STRUCTURES AT LOW TEMPERATURES USING SELF-ALIGNED AND VERTICALLY COUPLED ALUMINUM AND SILICON SINGLE-ELECTRON TRANSISTORS Luyan Sun, Doctor of Philosophy, 2008 Dissertation directed by: Dr. Bruce E. Kane Department of Physics I incorporate an Al-AlOx-Al single-electron transistor (SET) as the gate of a narrow (∼ 100 nm) metal-...

Low-doped silicon multi-nanowire field effect transistors with high ON/OFF ratio over 10(7) and a low subthreshold swing of 60-120 mV dec(-1) are fabricated using lithographic semiconductor processes. The use of multi-nanowires instead of a single nanowire as sensing elements has shown improved device uniformity and stability in buffer solutions. The device stability is further improved with su...

In this work, the effect of displacement defect (DD) owing to cosmic rays on six-transistor (6T) static random access memory (SRAM) with a 3 nm node nanosheet field-effect transistor (NSFET) is investigated using technology computer-aided design (TCAD) simulation. order comprehensively study uncertainty radiation NSFET 6T SRAM, shape DD cluster cross-section and damaged by in SRAM are considere...

Low-doped silicon multi-nanowire field effect transistors with high ON/OFF ratio over 10 and a low subthreshold swing of 60–120 mV dec 1 are fabricated using lithographic semiconductor processes. The use of multi-nanowires instead of a single nanowire as sensing elements has shown improved device uniformity and stability in buffer solutions. The device stability is further improved with surface...