نتایج جستجو برای: semiconductor thin film
تعداد نتایج: 241592 فیلتر نتایج به سال:
Over the past decade, many applications were intended for filtration by membrane technology especially the thin film composite (TFC) membranes. In advanced developments of thin film membranes, an attempt was made to spread a new generation of membranes called thin film nano composite (TFN) membranes. However, in the last generation of TFNs, an ultrathin selective film of nanoparticles is coated...
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thin bonded films have many applications in antireflection and reflection coating, insulating and conducting films and semiconductor industries. thermal conductivity is one of the most important parameter for power packaging since the thermal resistance of the interconnections is directly related to the heat removal capability and thermal management of the power package. the defects in material...
رشد رونشستی از فاز مایع روشی است که برای ساختن ادوات الکترونیکی و لیزری نیمه هادی بطور وسیعی از آن استفاده می شود. در این پایان نامه، لایه های نازک gaas/algaas روی یک زیر لایه n-gaas با جهتمندی (100) با روش lpe رشد داده شده اند که این لایه های نازک دارای مشخصات زیر هستند: لایه اول) n-gaas:te به ضخامت 4 تا 6 میکرون و تراکم آلاینده n=4x10 18 cm-3 لایه دوم) n-al0.4ga0.6as:sn به ضخامت 5/1 تا 5/...
ZnO is a wide bandgap semiconductor that has many potential applications including solar cell electrodes, transparent thin film transistors and gas/biological sensors. Since the surfaces of ZnO materials have no amorphous or oxidized layers, they are very environmentally sensitive, making control of their semiconductor properties challenging. In particular, the electronic properties of ZnO nano...
The process of thermal Marangoni drying is considered, which has been recently proposed for use in semiconductor production. The process allows ultraclean drying of semiconductor wafer surfaces at the end of a sequence of wet operations. A theoretical model is presented, which incorporates the movement of a thin liquid film on the semiconductor surface, heat exchange between the semiconductor a...
Related Articles Interfacial oxide re-growth in thin film metal oxide III-V semiconductor systems Appl. Phys. Lett. 100, 141606 (2012) High dielectric tunability in lead niobate pyrochlore films Appl. Phys. Lett. 100, 082901 (2012) Reduced leakage current, enhanced ferroelectric and dielectric properties in (Ce,Fe)-codoped Na0.5Bi0.5TiO3 film Appl. Phys. Lett. 100, 022909 (2012) Modified Johnso...
Fowler et al., "Planar Superlattice Structure'', IBM Technical Disclosure Bulletin, vol. 12, No. 12, May 1970, pp. 2237-2237a. . Heiblum, "Ballistic Electrons and Holes Observed m a Semiconductor," Optics News, Oct. 1988, pp. 13-16. Gaylord et al., "Semiconductor Superlattice Electron Wave Interference Filters", Appl. Phys. Lett., 53(21), Nov. 21, 1988, pp. 2047-2049. Thielen, "Design of Multil...
The mixed valence vanadium oxide V6O13 is an interesting material which exhibits an insulator-to-metal or semiconductor-to-semiconductor transition at low temperatures. It is also a much studied cathode material for lithium-based thin film batteries. However, there is little information available about its mechanical properties. Young’s modulus of pulsed-laser deposited V6O13 thin films has bee...
We report on the electrical in-situ characterisation of organic thin film transistors under high vacuum conditions. Model devices in a bottom-gate/bottom-contact (coplanar) configuration are electrically characterised in-situ, monolayer by monolayer (ML), while the organic semiconductor (OSC) is evaporated by organic molecular beam epitaxy (OMBE). Thermal SiO2 with an optional polymer interface...
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