For different models of the electron-phonon interaction, the asymptotic behaviour of the moments of the stationary homogeneous solution of the linear Boltzmann equation is determined in the limit of a high external field. For Hilbert-Schmidt kernels of a finite rank, a result recently proven for kernels of rank one is found generally valid; as a consequence velocity saturation is excluded for t...

1 Rolf W. Martin, Esslingen University of Applied Sciences, Department of Basic Sciences, Flandernstr. 101, 73732 Esslingen, Germany, [email protected] 2 Otto A. Strobel, Esslingen University of Applied Sciences, Department of Basic Sciences, Flandernstr. 101, 73732 Esslingen, Germany, [email protected] Abstract – A computer based laboratory experiment in the physics lab fo...

The sensitive dependence of a semiconductor's electronic, optical and magnetic properties on dopants has provided an extensive range of tunable phenomena to explore and apply to devices. Recently it has become possible to move past the tunable properties of an ensemble of dopants to identify the effects of a solitary dopant on commercial device performance as well as locally on the fundamental ...

“One day in the year of 1820, walking to his lecture at the University of Copenhagen, Oersted got an idea. If static electricity did not affect magnets in any way, maybe things would be different if one tried electricity moving through the wire connecting the two poles of the Volta pile. Arriving at the classroom filled with a crowd of young students, Oersted placed on the lecture table his Vol...

Charge transport models developed for disordered organic semiconductors predict a non-Arrhenius temperature dependence ln(mu) proportional, variant1/T(2) for the mobility mu. We demonstrate that in space-charge limited diodes the hole mobility (micro(h)) of a large variety of organic semiconductors shows a universal Arrhenius temperature dependence micro(h)(T) = micro(0)exp(-Delta/kT) at low fi...

The theoretical study of magnetic semiconductors using the dynamical coherent potential approximation (dynamical CPA) is briefly reviewed. First, we give the results for ferromagnetic semiconductors (FMSs) such as EuO and EuS by applying the dynamical CPA to the s-f model. Next, applying the dynamical CPA to a simple model for A1−xMnxB-type diluted magnetic semiconductors (DMSs), we show the re...

We employ dynamical mean-field theory to identify the materials properties that optimize T(c) for a generalized double-exchange model. We reach the surprising conclusion that T(c) achieves a maximum when the band angular momentum j equals 3/2 and when the masses in the m(j) = +/- 1/2 and +/-3/2 and subbands are equal. However, we also find that T(c) is significantly reduced as the ratio of the ...

The development of new organic semiconductors with improved electrical performance and enhanced environmental stability is the focus of considerable research activity. This communication presents the design, synthesis, and device stability data for novel bis-5'-alkylthiophen-2'yl-2,6-anthracene organic semiconductors. When incorporated into thin-film field-effect transistors, mobilities as high...

The electron transport properties of atomically thin semiconductors such as MoS2 have attracted significant recent scrutiny and controversy. In this work, the scattering mechanisms responsible for limiting the mobility of single-layer semiconductors are evaluated. The roles of individual scattering rates are tracked as the two-dimensional electron gas density is varied over orders of magnitude ...

F or the past 40 years, the semiconductor industry has distinguished itself by the rapid pace of improvement in its products. This growth has resulted principally from the industry’s ability to decrease exponentially the minimum feature sizes it uses to fabricate integrated circuits, commonly referred to as Moore’s law. The most significant trend for society is the decreasing cost per function,...