In this paper, we demonstrate high-performance lateral AlGaN/GaN Schottky barrier diodes (SBD) on Si substrate with a recessed-anode structure. The optimized rapid etch process provides results in improving etching quality 0.26-nm roughness of the anode recessed surface. By using high work function metal Pt as electrode, low turn-on voltage 0.71 V is obtained uniformity ±0.023 for 40 devices. S...

A SiC high-k (HK) split-gate (SG) MOSFET is proposed with a Schottky barrier diode (SBD) integrated between the split gates, and investigated by numerical TCAD simulation. Results show that it has same breakdown voltage as an optimized practical k value of 30 for its insulation pillar, which results in highest (1857 V). The forward (VF) reverse recovery charge (QRR) device are 0.9 V 3.49 μC/cm2...

Polymer diodes require cathodes that do not corrode the polymer but do have low work function to minimize the electron injection barrier. First-principles calculations demonstrate that the work function of the (1000) surface of the compound Ca 2 N is half an eV lower than that of the elemental metal Ca (2.35 vs. 2.87 eV). Moreover its reactivity is expected to be smaller. This makes Ca 2 N an i...

This paper focuses on using high temperature operating capability of SiC power devices, which are packaged in power modules. A SiC Schottky barrier diode is mounted on an active metal brazed Si3N4 substrate as a heat resistive power module. The temperature dependency of electrical characteristics of the SiC device and thermal dynamics of the power module are modeled for numerical electro therma...

We present room temperature resonant tunneling of GaSb/AlAsSb double barrier resonant tunneling diodes with pseudomorphically grown prewell emitter structures comprising the ternary compound semiconductors GaInSb and GaAsSb. At room temperature, resonant tunneling is absent for diode structures without prewell emitters. The incorporation of Ga0.84In0.16Sb and GaAs0.05Sb0.95 prewell emitters lea...

Abstract We present an approach for the highly sensitive photon detection based on the quantum dots (QDs) operating at temperature of 77K. The detection structure is based on an AlAs/GaAs/AlAs double barrier resonant tunneling diode combined with a layer of self-assembled InAs QDs (QDRTD). A photon rate of 115 photons per second had induced 10nA photocurrent in this structure, corresponding to ...