While the SOI (Silicon-On-Insulator) device concept is very old, commercialization of the technology is relatively new and growing rapidly in high-speed processor and lowpower applications. Furthermore, features such as latch-up immunity, radiation hardness and high-temperature operation are very attractive in high energy and space applications. Once high-quality bonded SOI wafers became availa...

In this paper, we proposed a 2-D analytical model for electrical characteristics such as surface potential, electric field and drain current of Silicon-on-Insulator Tunnel Field Effect Transistor (SOI TFETs) with a SiO2/High-k stacked gate-oxide structure. By using superposition principle with suitable boundary conditions, the Poisson’s equation has been solved to model the channel r...

Electronic band structures in semiconductors are uniquely determined by the constituent elements of the lattice. For example, bulk silicon has an indirect bandgap and it prohibits efficient light emission. Here we report the electrical tuning of the direct/indirect band optical transition in an ultrathin silicon-on-insulator (SOI) gated metal-oxide-semiconductor (MOS) light-emitting diode. A sp...

Silicon nanophotonics has recently attracted great attention since it offers an opportunity for low cost opto-electronic solutions based on silicon complementary metal oxide semiconductor (MOS) technology. Photonic crystal (PhC) structures with slow photon effect are expected to play a key role in future large-scale ultra-compact photonic integrated circuits. A novel vertical-MOS-capacitor-base...

We fabricate silicon waveguides in silicon-on-insulator (SOI) wafers clad with either silicon dioxide, silicon nitride, or aluminum oxide and, by measuring their electro-optic behavior, we characterize the capacitively induced free-carrier effect. By comparing our results with simulations, we confirm that the observed voltage dependences of the transmission spectra are due to changes in the con...

In recent years, the mobile communication market represented by the mobile telephone has been showing remarkable growth. This market has been making tough demands for semiconductor integrated circuits, which are mounted components, to consume less power, have higher integration, have multi-function capability, and be faster. We at Oki have been working on developing complete depletion type SOI ...

A new transmission-type electron multiplier was fabricated from silicon-on-insulator (SOI) material by integrating an array of one-dimensional (1D) silicon nanopillars onto a two-dimensional (2D) silicon membrane. Primary electrons are injected into the nanopillar-membrane (NPM) system from the flat surface of the membrane, while electron emission from the nanopillars is probed by an anode. The...

The specification for the total thickness variation (TTV) of the device layers on thick-film silicon on insulator (SOI) wafers tighten for future applications. Therefore, the bulk removal polishing process of current technology after grinding cannot meet the demands in terms of flatness. The currently required amount of material removal for polishing out the induced sub surface damage (SSD) of ...